2SB1462

Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216 1.6±0.15 Unit: mm s Features q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.45±0.1 0.3 0.75±0.15 Ratings –60 –50 –7 –200 –100 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS-Mini Type Package Marking symbol : A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –60 –50 –7 160 – 0.11 80 2.7 460 – 0.3 V MHz pF min typ max – 0.1 –100 Unit µA µA V V V *h FE Rank classification Rank hFE Marking Symbol Q 160 ~ 260 AQ R 210 ~ 340 AR S 290 ~ 460 AS 0 to 0.1 0.2±0.1 0.15–0.05 +0.1 0.2–0.05 +0.1 1 Transistor PC — Ta 150 –60 Ta=25˚C 125 –50 IB=–300µA –250µA –40 –200µA –30 –150µA –100µA –50 2SB1462 IC — VCE –60 VCE=–5V Ta=25˚C IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 100 Collector current IC (mA) –18 –40 75 –30 50 –20 –20 25 –10 –50µA –10 0 0 20 40 60 80 100 120 140 160 0 0 –6 –12 0 0 –150 –300 –450 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA) IB — VBE –400 VCE=–5V Ta=25˚C –350 –200 –240 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) –10 –3 –1 VCE=–5V 25˚C Ta=75˚C –25˚C VCE(sat) — IC IC/IB=10 Collector current IC (mA) Base current IB (µA) –300 –250 –200 –150 –100 –50 0 0 – 0.6 –1.2 –1.8 Ta=75˚C 25˚C –25˚C –160 – 0.3 – 0.1 – 0.03 – 0.01 –120 –80 –40 – 0.003 – 0.001 –1 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –3 –10 –30 –100 –300 –1000 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 600 VCE=–10V 160 140 120 100 80 60 40 20 0 –1 0 0.1 VCB=–10V Ta=25˚C fT — I E 8 Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 7 6 5 4 3 2 1 0 –1 400 Ta=75˚C 300 25˚C –25˚C 200 100 –3 –10 –30 –100 –300 –1000 0.3 1 3 10 30 100 –3 –10 –30 –100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor NF — IE 6 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C 20 18 16 VCB=–5V Rg=50kΩ Ta=25˚C 2SB1462 NF — IE 300 hfe 100 h Parameter — IE 5 Noise figure NF (dB) Noise figure NF (dB) h Parameter 4 14 12 10 8 6 4 2 10kHz hie (kΩ) VCE=–5V f=270Hz Ta=25˚C 3 10 f=100Hz 1kHz 30 hoe (µS) 3 10 2 1 3 0 0.01 0.03 0.1 0.3 1 3 10 0 0.1 0.3 1 3 10 1 0.1 hre 0.3 (!10–4) 1 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) h Parameter — VCE 300 hfe 100 IE=2mA f=270Hz Ta=25˚C h Parameter 30 hoe (µS) 10 3 hre (!10–4) hie (kΩ) 1 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3