2SB1599

Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm s Features q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 4.0–0.20 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Base current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –50 –40 –5 –3 – 0.6 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 0.4±0.04 Symbol VCBO VCEO VEBO ICP IB PC* Tj Tstg marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1X Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE * Conditions VCB = –20V, IE = 0 VCE = –12V, IB = 0 VEB = –5V, IC = 0 IC = –1mA, IE = 0 IC = –10mA, IB = 0 VCE = –5V, IC = –1A IC = –1.5A, IB = –0.15A IC = –2A, IB = –0.2A VCB = –5V, IE = 0.5A, f = 200MHz VCB = –5V, IE = 0, f = 1MHz min typ max –1 –100 –100 –50 –40 50 – 0.4 220 –1 –1.5 150 70 VCE(sat) VBE(sat) fT Cob *h FE Rank classification P 50 ~ 100 Q 80 ~ 160 R 100 ~ 220 hFE Rank 2.5±0.1 +0.25 Unit µA µA µA V V V V MHz pF 1 Transistor PC — Ta 1.4 2SB1599 IC — VCE TC=25˚C IB=–40mA –35mA VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 –10 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. –4.0 –3.5 Collector current IC (A) 1.0 –3.0 –2.5 –2.0 –1.5 –1.0 –30mA –25mA –20mA –15mA –10mA –5mA –3 0.8 –1 0.6 – 0.3 Ta=100˚C 25˚C –25˚C 0.4 – 0.1 0.2 – 0.5 0 0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 – 0.03 0 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –10 1000 hFE — IC 240 VCE=–5V fT — I E VCB=–5V f=50MHz Ta=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) –3 200 –3 25˚C –1 Ta=–25˚C 100˚C 300 TC=100˚C 25˚C 160 100 –25˚C 120 – 0.3 30 – 0.1 10 80 – 0.03 3 40 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob — VCB 150 –80 VCER — RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25˚C Ta=25˚C 1000 ICEO — Ta VCE=–12V Collector output capacitance Cob (pF) –70 300 –60 120 ICEO (Ta) ICEO (Ta=25˚C) 100 90 –50 –40 –30 2SA699 –20 –10 0 0.001 2SA699A 30 60 10 30 3 0 –1 1 0.01 0.1 1 10 0 20 40 60 80 100 120 –3 –10 –30 –100 Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) Ambient temperature Ta (˚C) 2