2SB1603A

Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –40 –50 –20 –40 –5 –8 –4 25 2 150 –55 to +150 Unit V 13.7–0.2 +0.5 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB1603A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 7° 123 V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1603 2SB1603A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –1A IC = –2A, IB = – 0.1A IC = –2A, IB = – 0.1A VCE = –5V, IC = – 0.5A, f = 10MHz IC = –2A, IB1 = – 0.2A, IB2 = 0.2A min typ max –50 –50 Unit µA µA V –20 –40 45 90 260 – 0.5 –1.5 150 0.3 0.4 0.1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT ton tstg tf V V MHz µs µs µs Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 40 –6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 2SB1603, 2SB1603A IC — VCE IB=–80mA VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=20 –30 –10 –3 –1 TC=25˚C Collector power dissipation PC (W) 35 30 25 20 15 10 5 0 0 25 –5 Collector current IC (A) –4 –50mA –45mA –40mA –35mA –30mA (1) –3 –25mA –20mA TC=100˚C 25˚C –25˚C –2 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –15mA –10mA (2) (3) –1 –5mA 0 50 75 100 125 150 0 –2 –4 –6 –8 –10 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –100 –1000 IC/IB=20 hFE — IC 1000 VCE=–2V TC=100˚C 25˚C –25˚C –30 –10 –3 –1 300 100 30 10 3 1 0.3 fT — IC VCE=–2V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE –10 –3 –1 TC=–25˚C 25˚C 100˚C –100 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.3 – 0.1 – 0.01 – 0.03 – 0.1 – 0.3 Transition frequency fT (MHz) –1 –3 –10 –30 –300 –1 –3 –10 0.1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf — IC 10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–20V TC=25˚C ton 0.3 tstg tf Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C Switching time ton,tstg,tf (µs) 3 Collector current IC (A) –10 –3 –1 ICP 10ms IC 1s t=1ms 1 0.1 – 0.3 – 0.1 – 0.03 0.03 0.01 0 –1 –2 –3 –4 –5 –6 –7 –8 – 0.01 –1 –3 –10 –30 2SB1603A –100 –300 –1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB1603 Power Transistors Rth(t) — t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 2SB1603, 2SB1603A Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3