2SB1605A

Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q q q Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.1±0.2 8.0±0.2 Solder Dip s Absolute Maximum Ratings 15.0±0.3 3.0±0.2 13.7–0.2 +0.5 V 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB1605A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 7° 123 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1605 2SB1605A 2SB1605 2SB1605A 2SB1605 2SB1605A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –1A, IB1 = – 0.1A, IB2 = 0.1A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.375A VCE = –10V, IC = – 0.5A, f = 10MHz 30 0.5 1.2 0.3 –60 –80 70 10 –1.8 –1.2 V V MHz µs µs µs 250 min typ max –200 –200 –300 –300 –1 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC — Ta 50 –6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C –5 2SB1605, 2SB1605A IC — VCE –10 VCE=–4V IC — VBE Collector power dissipation PC (W) Collector current IC (A) IB=–100mA –4 –80mA –60mA –3 –40mA –30mA –20mA 30 Collector current IC (A) 40 –8 –6 25˚C TC=100˚C –4 –25˚C (1) 20 –2 10 (3) (4) 0 0 20 40 60 (2) –1 –16mA 0 –2 –4 –6 –8 –12mA –8mA –4mA –2 0 80 100 120 140 160 0 –10 –12 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 10000 hFE — IC 10000 VCE=–4V 3000 1000 300 100 30 10 3 fT — IC VCE=–5V f=10MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 25˚C TC=100˚C –25˚C – 0.3 TC=100˚C –25˚C 25˚C – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Transition frequency fT (MHz) –1 –3 –10 3000 –1 –3 –10 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Rth(t) — t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 2