2SB1606

Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (Ta=25˚C) Ratings –130 –80 –7 –10 –5 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.7–0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 7° 123 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (Ta=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf IC = –2A, IB1 = – 0.2A, IB2 = 0.2A Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –2A IC = –4A, IB = – 0.2A IC = –4A, IB = – 0.2A VCE = –10V, IC = – 0.5A, f = 10MHz 30 0.13 0.5 0.13 –80 45 90 260 – 0.5 –1.5 V V MHz µs µs µs min typ max –10 –50 Unit µA µA V FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 50 –8 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) –7 IB=–120mA TC=25˚C 2SB1606 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=20 –30 –10 –3 –1 VCE(sat) — IC Collector power dissipation PC (W) Collector current IC (A) 40 –100mA –6 –5 –4 –3 –20mA –2 –10mA –1 –3mA 0 –80mA –60mA –40mA –30mA 30 (1) 20 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 25˚C TC=100˚C –25˚C 10 (3) (4) 0 0 20 40 60 (2) 80 100 120 140 160 0 –2 –4 –6 –8 –10 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –100 10000 IC/IB=20 hFE — IC 10000 VCE=–2V 3000 1000 300 100 30 10 3 fT — IC VCE=–10V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE –10 –3 25˚C –1 TC=–25˚C 100˚C 1000 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 TC=100˚C –25˚C 25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Transition frequency fT (MHz) –3 –10 –30 3000 –1 –3 –10 –1 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP t=0.5ms –3 –1 IC 10ms DC 1ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 – 0.1 – 0.3 Switching time ton,tstg,tf (µs) 10 3 1 0.3 0.1 0.03 0.01 Collector current IC (A) –10 tstg ton tf – 0.3 – 0.1 – 0.03 – 0.01 –1 –1 –3 –10 –30 –100 0 – 0.8 –1.6 –2.4 –3.2 –3 –10 –30 –100 –300 –1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 2SB1606 Thermal resistance Rth(t) (˚C/W) 102 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3