2SB1612

Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm s Features q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 4.0–0.20 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –10 –10 –7 –2.4 –2 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 0.4±0.04 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking 1:Base 2:Collector 3:Emitter EIAJ SC–62 Mini Power Type Package Marking symbol : 2F Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = –7V, IE = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = 200mA IC = –1A, IB = –10mA VCB = –6V, IE = 50mA, f = 200MHz VCB = –6V, IE = 0, f = 1MHz –10 –10 –7 200 – 0.19 60 100 800 – 0.25 V MHz pF min typ max –1 Unit µA V V V 2.5±0.1 +0.25 1 Transistor PC — Ta 1.4 2SB1612 IC — VCE –1.2 Ta=25˚C –1.0 –2.5 –3.0 VCE=–2V IC — VBE Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 25˚C Ta=75˚C –25˚C Collector current IC (A) 1.0 – 0.8 Collector current IC (A) IB=–3.0mA –2.5mA –2.0mA –1.5mA –1.0mA – 0.5mA –2.0 0.8 – 0.6 –1.5 0.6 – 0.4 –1.0 0.4 0.2 – 0.2 – 0.5 0 0 20 40 60 80 100 120 140 160 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –2.4 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 IC/IB=100 600 hFE — IC 240 VCE=–2V fT — I E VCB=–6V f=200MHz Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) –1 –3 –10 200 400 Ta=75˚C 300 25˚C –25˚C 200 160 120 – 0.3 25˚C – 0.1 Ta=75˚C 80 –25˚C 100 40 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 240 Collector output capacitance Cob (pF) 200 IE=0 f=1MHz Ta=25˚C 160 120 80 40 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2