2SB1623

Power Transistors 2SB1623 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 I Features φ 3.2±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 2 5 ° C Ta = 2 5 ° C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −8 −4 40 2.0 150 −55 to +150 °C °C Unit V V V A A W 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package Junction temperature Storage temperature I Electrical Characteristics TC = 25°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Base to emitter voltage (DC value) Collector to emitter saturation voltage VBE VCE(sat)1 VCE(sat)2 Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 P Q R 1 000 to 2 500 fT ton tstg tf * Conditions VCB = −60 V, VBE = 0 VCB = −30 V, IB = 0 VEB = −5 V, IC = 0 IC = −30 mA, IB = 0 VCE = −3 V, IC = − 0.5 A VCE = −3 V, IC = −3 A VCE = −3 V, IC = −3 A IC = −3 A, IB = −12 mA IC = −5 A, IB = −20 mA VCB = −10 V, IC = − 0.5 A, f = 1 MHz IC = −3 A, IB1 = −12 mA, IB2 = 12 mA VCC = −50 V Min Typ Max −200 −500 −2 Unit µA µA mA V −60 1 000 1 000 10 000 −2.5 −2 −4 20 0.3 2 0.5 V V V MHz µs µs µs 4 000 to 10 000 2 000 to 5 000 1