2SB1631

Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –60 –6 –6 –3 –1 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg C1.0 2.25±0.2 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 123 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency *h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE fT * Conditions VCB = –60V, IE = 0 VEB = –40V, IC = 0 VEB = –6V, IC = 0 IC = –25mA, IB = 0 VCE = –4V, IC = – 0.5A IC = –2A, IB = – 0.05A VCE = –12V, IC = – 0.2A, f = 10MHz min typ max –100 –100 –100 Unit µA µA µA V –60 300 700 –1 30 VCE(sat) V MHz FE Rank classification Q 300 to 500 P 400 to 700 Rank hFE 1 Power Transistors PC — Ta 20 –6 (1) TC=Ta (2) Without heat sink (PC=2.0W) TC=25˚C –5 –5 IB=–100mA –80mA –60mA –40mA –3 –20mA –2 –10mA –5mA –1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 –2mA 0 0 – 0.4 – 0.8 2SB1631 IC — VCE –6 VCE=–4V IC — VBE Collector power dissipation PC (W) Collector current IC (A) 15 –4 Collector current IC (A) –4 (1) 10 –3 –2 TC=125˚C 25˚C –25˚C 5 –1 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=40 –30 –10 25˚C –3 –1 TC=100˚C –25˚C 10000 hFE — IC VCE=–4V 1000 fT — IC VCE=–12V f=10MHz TC=25˚C Forward current transfer ratio hFE 3000 TC=100˚C 25˚C Transition frequency fT (MHz) –1 –3 –10 300 1000 –25˚C 300 100 30 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 100 10 30 3 –1 –3 –10 10 – 0.01 – 0.03 – 0.1 – 0.3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=40 (–IB1=IB2) VCC=–50V TC=25˚C Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) 300 10 3 tf 1 ton 0.3 0.1 0.03 Collector current IC (A) –10 –3 –1 ICP t=1ms IC DC 10ms 100 30 tstg 10 – 0.3 – 0.1 – 0.03 – 0.01 –1 3 1 –1 0.01 –3 –10 –30 –100 0 –2 –4 –6 –8 –3 –10 –30 –100 –300 –1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 2SB1631 Thermal resistance Rth(t) (˚C/W) 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3