2SB1645

Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit: mm For power amplification (10.0) 15.5±0.5 φ 3.2±0.1 5° 3.0±0.3 5° 26.5±0.5 (23.4) 5° 5° 5° 0.7±0.1 I Features • Satisfactory forward current transfer ratio hFE characteristics • Wide area of safe operation (ASO) • Optimum for the output stage of a HiFi audio amplifier (4.5) (2.0) I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 2 5 ° C Ta = 2 5 ° C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −160 −160 −5 −15 −8 100 3 150 −55 to +150 °C °C Unit V V V A A W 18.6±0.5 (2.0) Solder Dip (4.0) 2.0±0.2 1.1±0.1 5.45±0.3 10.9±0.5 3.3±0.3 5° 1 2 3 5.5±0.3 1: Base 2: Collector 3: Emitter TOP-3E Package Internal Connection C B Junction temperature Storage temperature (2.0) E I Electrical Characteristics TC = 25°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 P Q * Conditions VCB = −160 V, IE = 0 VCB = −160 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −1 A VCE = −5 V, IC = −7 A IC = −7 A, IB = −7 mA IC = −7 A, IB = −7 mA VCE = −10 V, IC = − 0.5 A, f = 1 MHz IC = 7 A, IB1 = −7 mA, IB2 = 7 mA VCC = −50 V Min Typ Max −100 −100 −100 Unit µA µA µA V −160 500 3 500 15 000 −3 −3 20 1.0 1.5 1.2 VCE(sat) VBE(sat) fT ton tstg tf V V MHz µs µs µs 5 000 to 15 000 3 500 to 10 000 22.0±0.5 (1.2) 1 2SB1645 PC  Ta 120 (1) (1) TC = Ta (2) With a 100 × 100 × 2 mm3 Al heat sink (3) Without heat sink Power Transistors Area of safe operation (ASO) −100 ICP Non repetitive pulse TC = 25°C t = 1 ms t = 10 ms t=1s Collector power dissipation PC (W) 100 Collector current IC (A) −10 IC −1 80 60 40 20 − 0.01 (2) (3) 0 0 20 40 60 80 100 120 140 160 − 0.001 −1 −10 −100 VCEO max. −1 000 − 0.1 Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) 2