2SB1679

Transistors 2SB1679 Silicon PNP epitaxial planer type Unit: mm (0.425) For low-frequency amplification I Features • Large current capacitance • Low collector to emitter saturation voltage • Small type package, allowing downsizing and thinning of the equipment. 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5° 1 2 0.2±0.1 (0.65) (0.65) 1.3±0.1 2.0±0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −15 −10 −7 − 0.5 −1 150 150 −55 to +150 Unit V V V A A mW °C °C 10° 0.9±0.1 0.9+0.2 –0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 3V I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Base to emitter saturation voltage Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 R 130 to 220 S 180 to 350 *1 Symbol ICBO VCBO VCEO VEBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = −10 V, IE = 0 IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −2 V, IC = − 0.5 A VCE = −2 V, IC = −1 A IC = − 0.4 A, IB = −8 mA IC = − 0.4 A, IB = −8 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −15 −10 −7 130 60 Typ 0 to 0.1 Max −100 Unit nA V V V 350 − 0.16 − 0.8 130 22 − 0.3 −1.2 V V MHz pF 1