2SB709A

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 60 50 7 200 100 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 1.1 –0.1 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : Z s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage Collector output capacitance *h (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT NV Cob * Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = 10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 s Absolute Maximum Ratings max 0.1 100 0.16 –0.06 +0.1 Unit µA µA V V V 60 50 7 160 90 0.1 150 110 3.5 0.3 460 V MHz mV pF FE1 Rank classification Rank hFE1 Q 160 ~ 260 ZQ R 210 ~ 340 ZR S 290 ~ 460 ZS Marking Symbol 1 Transistor PC — Ta 240 60 Ta=25˚C IB=160µA 200 50 1000 2SD601A IC — VCE 1200 VCE=10V Ta=25˚C IB — VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 40 Base current IB (µA) 140µA 120µA 100µA 30 80µA 20 60µA 40µA 10 20µA 800 120 600 80 400 40 200 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC — VBE 200 VCE=10V 200 240 VCE=10V Ta=25˚C IC — I B Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) — IC IC/IB=10 Collector current IC (mA) Collector current IC (mA) 160 160 120 25˚C Ta=75˚C 80 –25˚C 120 80 25˚C Ta=75˚C –25˚C 40 40 0 0 0.4 0.8 1.2 1.6 2.0 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base current IB (µA) Collector current IC (mA) hFE — IC 600 VCE=10V 300 fT — I E 240 VCB=10V Ta=25˚C NV — IC VCE=10V GV=80dB Function=FLAT 200 Ta=25˚C 160 Rg=100kΩ Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 400 Ta=75˚C 25˚C 180 300 Noise voltage NV (mV) 240 –25˚C 120 120 200 80 22kΩ 4.7kΩ 100 60 40 0 0.1 0.3 1 3 10 30 100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 0 10 30 100 300 1000 Collector current IC (mA) Emitter current IE (mA) Collector current IC (mA) 2