2SB766A

Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm s Features q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 1cm2 Unit V 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 emitter voltage 2SB766A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package marking Marking symbol : Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board A(2SB766) B(2SB766A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB766 2SB766A 2SB766 2SB766A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –500mA*2 VCE = –5V, IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –5 85 50 – 0.2 – 0.85 200 20 *2 min typ max – 0.1 Unit µA V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 340 – 0.4 –1.2 MHz 30 pF Rank classification Rank hFE1 Q 85 ~ 170 2SB766 2SB766A AQ BQ R 120 ~ 240 AR BR S 170 ~ 340 AS BS Pulse measurement Marking Symbol 2.5±0.1 +0.25 Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.5±0.1 1.6±0.2 1.5±0.1 V V V V 1 Transistor PC — Ta 1.4 2SB766, 2SB766A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –1.50 Ta=25˚C –1.25 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 Collector current IC (A) –1.00 0.8 – 0.75 0.6 – 0.50 – 0.3 – 0.1 – 0.03 0.4 0.2 – 0.25 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –100 hFE — IC IC/IB=10 600 VCE=–10V 200 180 500 VCB=–10V Ta=25˚C fT — I E Base to emitter saturation voltage VBE(sat) (V) Transition frequency fT (MHz) –1 –3 –10 –30 –10 –3 25˚C –1 75˚C Ta=–25˚C Forward current transfer ratio hFE 160 140 120 100 80 60 40 20 400 Ta=75˚C 300 25˚C 200 –25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 100 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 50 Area of safe operation (ASO) –10 IE=0 f=1MHz Ta=25˚C –3 ICP Single pulse Ta=25˚C Collector output capacitance Cob (pF) 45 40 35 30 25 20 15 10 5 0 –1 Collector current IC (A) –1 IC t=10ms t=1s – 0.3 – 0.1 – 0.03 – 0.01 2SB766A 2SB766 – 0.003 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –3 –10 –30 –100 –1 –3 –10 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2