2SB774

Transistor 2SB774 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm s Features q q 5.0±0.2 4.0±0.2 High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –25 –15 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 5.1±0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 123 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob * Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA VCE = –2V, IC = –100mA IC = –100mA, IB = –10mA VCB = –10V, IE = 2mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max –1 –100 Unit µA µA V V V –30 –25 –15 210 90 –0.5 150 4 460 V MHz pF *h FE1 Rank classification R 210 ~ 340 S 290 ~ 460 Rank hFE1 1 Transistor PC — Ta 500 –240 Ta=25˚C 450 –200 IB=–1.8mA –1.6mA –180 –1.4mA –1.2mA –1.0mA – 0.8mA – 0.6mA – 0.4mA –80 – 0.2mA –40 2SB774 IC — VCE –200 VCE=–10V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 –160 Collector current IC (mA) 400 –160 –140 –120 –100 –80 –60 –40 –20 25˚C Ta=75˚C –25˚C –120 0 0 –2 –4 –6 –8 –10 –12 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 IC/IB=10 600 hFE — IC 1000 VCE=–10V fT — I E VCB=–10V Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) –10 –30 –100 300 400 Ta=75˚C 25˚C 300 –25˚C 200 100 – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 Ta=75˚C 25˚C –25˚C 30 100 –1 –3 –10 –30 –100 0 – 0.1 – 0.3 –1 –3 10 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 12 Collector output capacitance Cob (pF) 10 IE=0 f=1MHz Ta=25˚C 8 6 4 2 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2