2SB788

2SB788

  • 厂商:

    PANASONIC

  • 封装:

  • 描述:

    2SB788 - Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) - Pan...

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB788 数据手册
Transistor 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD958 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –120 –120 –7 –50 –20 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±0.1 1.25±0.05 0.45±0.05 2 1 2.5 2.5 EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –2mA IC = –20mA, IB = –2mA VCB = –5V, IE = 2mA, f = 200MHz VCE = 40V, IC = –1mA, GV = 80dB, Rg = 100kΩ, Function = FLAT 150 150 –120 –120 –7 180 700 – 0.6 V MHz mV min typ max –100 –1 Unit nA µA V V V *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 4.1±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.0±0.1 R 0. 4.5±0.1 7 1 Transistor PC — Ta 500 –60 VCE=–5V 450 –50 25˚C 2SB788 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 VCE(sat) — IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (mA) 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 –40 Ta=75˚C –25˚C –30 –20 – 0.3 – 0.1 25˚C Ta=75˚C –10 –25˚C – 0.03 – 0.01 – 0.1 – 0.3 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –1 –3 –10 –30 –100 Ambient temperature Ta (˚C) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 600 VCE=–5V 320 280 240 200 160 120 80 40 0 – 0.1 – 0.3 0 0.1 fT — I E 5 Cob — VCB Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C IE=0 f=1MHz Ta=25˚C 4 Forward current transfer ratio hFE 500 Ta=75˚C 400 25˚C –25˚C Transition frequency fT (MHz) 3 300 2 200 100 1 –1 –3 –10 –30 –100 0.3 1 3 10 30 100 0 –1 –3 –10 –30 –100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) NV — IC 120 VCE=–10V GV=80dB Function=FLAT 100 Noise voltage NV (mV) 80 Rg=100kΩ 60 22kΩ 40 4.7kΩ 20 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 Collector current IC (mA) 2
2SB788
1. 物料型号: - 型号为2SB788,由Panasonic生产。

2. 器件简介: - 2SB788是一种硅PNP外延平面型晶体管,用于高击穿电压低噪声放大,与2SD958互补。M型封装,便于自动和手动插入,也可以单独固定在印刷电路板上。

3. 引脚分配: - 1: 基极(Base) - 2: 集电极(Collector) - 3: 发射极(Emitter)

4. 参数特性: - 绝对最大额定值: - 集电极-基极电压(VCBO):-120V - 集电极-发射极电压(VCEO):-120V - 发射极-基极电压(VEBO):-7V - 峰值集电极电流(Icp):-50mA - 集电极电流(Ic):-20mA - 集电极功率耗散(Pc):400mW - 结温(T):150°C - 储存温度(Tstg):-55°C至+150°C

5. 功能详解: - 电气特性(Ta=25°C): - 集电极截止电流(ICBO):-100nA - 集电极-发射极截止电流(ICEO):-1μA - 集电极-基极电压(VCBO):-120V - 集电极-发射极电压(VCEO):-120V - 发射极-基极电压(VEBO):-7V - 前向电流传输比(hFE):180至700 - 集电极-发射极饱和电压(VCE(sat)):-0.6V - 转换频率(fT):150MHz - 噪声电压(NV):150mV

6. 应用信息: - 适用于高击穿电压低噪声放大。

7. 封装信息: - 使用EIAJ:SC-71 M型塑封封装。
2SB788 价格&库存

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