2SB789A

Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm s Features q q 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB789 2SB789A 2SB789 VCBO VCEO VEBO ICP IC PC* Tj Tstg Symbol (Ta=25˚C) 1.0–0.2 +0.1 Ratings –100 –120 –100 –120 –5 –1 –0.5 1 150 –55 ~ +150 Unit V 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 emitter voltage 2SB789A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V marking V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : D(2SB789) E(2SB789A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector to emitter voltage 2SB789 2SB789A (Ta=25˚C) Symbol VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –100 –120 –5 90 50 – 0.2 – 0.85 120 30 – 0.6 –1.2 V V MHz pF 220 typ max Unit V V Collector to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Rank hFE1 Q 90 ~ 155 2SB789 2SB789A DQ EQ R 130 ~ 220 DR ER Marking Symbol 2.5±0.1 +0.25 High collector to emitter voltage VCEO. Large collector power dissipation PC. 1 Transistor PC — Ta 1.4 2SB789, 2SB789A IC — VCE –1.2 Ta=25˚C –1.0 –18mA –16mA –14mA IB=–20mA –12mA –10mA – 0.8mA – 0.6mA – 0.4mA –1.0 –1.2 VCE=–10V Ta=25˚C IC — I B Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (A) 1.0 – 0.8 0.8 – 0.6 0.6 – 0.4 – 0.2mA 0.4 0.2 – 0.2 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 Collector current IC (A) – 0.8 – 0.6 – 0.4 – 0.2 0 0 –3 –6 –9 –12 –15 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –100 –30 –10 –3 25˚C –1 Ta=–25˚C 75˚C IC/IB=10 600 hFE — IC VCE=–10V Forward current transfer ratio hFE 500 400 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Ta=75˚C 25˚C –25˚C 300 Ta=75˚C 200 25˚C –25˚C 100 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IE 200 180 Cob — VCB Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C 50 45 40 35 30 25 20 15 10 5 0 –1 IE=0 f=1MHz Ta=25˚C Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 3 10 30 100 –3 –10 –30 –100 Emitter current IE (mA) Collector to base voltage VCB (V) 2