2SB873

Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 5.9± 0.2 4.9± 0.2 s Features q q +0.3 +0.2 2.54± 0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –7 –10 –5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 0.45–0.1 1.27 13.5± 0.5 0.7–0.2 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7± 0.1 8.6± 0.2 0.45–0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE*1 VCE(sat) fT Cob Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A*2 IC = –3A, IB = –0.1A*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz *2 min typ 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package max –100 –100 Unit nA nA V V –20 –7 90 625 –1 120 85 V MHz pF Pulse measurement *1h FE Rank classification P 90 ~ 135 Q 120 ~ 205 R 180 ~ 625 Rank hFE 1 Transistor PC — Ta 1.2 –6 Ta=25˚C IB=–40mA 1.0 –5 –35mA –30mA –25mA –4 –20mA –15mA –10mA –2 –5mA –1 –1mA 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 0 0 – 0.4 – 0.8 –10 2SB873 IC — VCE –12 VCE=–2V 25˚C IC — VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) Ta=75˚C –8 –25˚C 0.8 0.6 –3 –6 0.4 –4 0.2 –2 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C IC/IB=30 600 hFE — IC 240 VCE=–2V Ta=75˚C 500 25˚C fT — I E VCB=–6V Ta=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) –1 –3 –10 200 400 160 300 –25˚C 120 – 0.3 – 0.1 – 0.03 200 80 100 40 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 0 – 0.01 – 0.03 – 0.1 – 0.3 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 200 –100 IE=0 f=1MHz Ta=25˚C –30 Area of safe operation (ASO) Single pulse Ta=25˚C Collector output capacitance Cob (pF) 180 160 140 120 100 80 60 40 20 0 –1 Collector current IC (A) –10 –3 –1 ICP IC t=1s t=10ms – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 –3 –10 –30 –100 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2