2SB935

Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. s 2.54±0.3 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –40 –50 –20 –40 –5 –15 –10 35 1.3 150 –55 to +150 Unit V 2SB935 2SB935A 2SB935 5.08±0.5 1 2 3 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 emitter voltage 2SB935A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 14.7±0.5 4.4±0.5 0 to 0.4 V A A W 10.0±0.3 1.5–0.4 4.4±0.5 2.0 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 5.08±0.5 ˚C ˚C 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB935 2SB935A 2SB935 2SB935A 1:Base 2:Collector 3:Emitter N Type Package (DS) (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = –2A, IB1 = –66mA, IB2 = 66mA Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –2A IC = –7A, IB = – 0.23A IC = –7A, IB = – 0.23A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz 150 200 0.1 0.5 0.1 –20 –40 45 90 260 – 0.6 –1.5 V V MHz pF µs µs µs min typ max –50 –50 –50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 3.0–0.2 +0.4 +0 1 Power Transistors PC — Ta 50 –12 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25˚C –10 IB=–160mA –100mA –8 –80mA 2SB935, 2SB935A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –10 VCE(sat) — IC IC/IB=30 Collector power dissipation PC (W) (1) 30 Collector current IC (A) 40 –3 –1 TC=100˚C 25˚C –25˚C –6 –60mA –40mA – 0.3 20 –4 –30mA –20mA – 0.1 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 –2 –10mA – 0.03 0 0 –2 –4 –6 –8 –10 –12 – 0.01 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –10 hFE — IC IC/IB=30 10000 VCE=–2V 10000 3000 1000 300 100 30 10 3 fT — IC VCE=–10V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE –3 1000 300 100 30 10 3 1 – 0.1 – 0.3 TC=100˚C –25˚C 25˚C –1 TC=–25˚C 100˚C 25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 Transition frequency fT (MHz) –10 –30 –100 3000 – 0.3 –1 –3 –10 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 10 f=1MHz TC=25˚C ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C Area of safe operation (ASO) –100 –30 ICP Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 – 0.1 – 0.3 Switching time ton,tstg,tf (µs) 3 Collector current IC (A) –10 –3 –1 IC 10ms t=1ms 1 tstg 0.3 ton 0.1 tf 0.03 300ms – 0.3 – 0.1 – 0.03 0.01 –1 –3 –10 –30 –100 0 –1 –2 –3 –4 –5 –6 –7 –8 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 2SB935A –100 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB935 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 2SB935, 2SB935A Thermal resistance Rth(t) (˚C/W) 102 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3