2SB939

Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –60 –80 –60 –80 –7 –12 –8 45 1.3 150 –55 to +150 Unit V 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB939 2SB939A 2SB939 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 emitter voltage 2SB939A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W 10.0±0.3 6.0±0.3 1.5–0.4 2.0 3.0–0.2 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 ˚C ˚C 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB939 2SB939A 2SB939 2SB939A 1:Base 2:Collector 3:Emitter N Type Package (DS) (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VEB = –7V, IC = 0 IC = –30mA, IB = 0 VCE = –3V, IC = –4A VCE = –3V, IC = –8A IC = –4A, IB = –8mA IC = –4A, IB = –8mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –4A, IB1 = –8mA, IB2 = 8mA, VCC = –50V 15 0.5 2 1 C min typ max –100 –100 –2 4.4±0.5 Unit µA mA V –60 –80 2000 500 –1.5 –2 10000 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 V V MHz µs µs µs Rank classification Q P 2000 to 5000 4000 to 10000 Internal Connection B Rank hFE1 E 14.7±0.5 +0.4 +0 1 Power Transistors PC — Ta 50 –8 (1) 40 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25˚C –7 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA – 0.6mA –3 – 0.4mA –2 –1 0 0 20 40 60 80 100 120 140 160 0 –1 –2 –3 –4 –5 – 0.2mA 2SB939, 2SB939A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –100 VCE(sat) — IC IC/IB=500 Collector power dissipation PC (W) –30 Collector current IC (A) –6 –5 –4 –10 30 –3 25˚C TC=100˚C 20 –1 –25˚C 10 (2) (3) 0 – 0.3 – 0.1 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) IC/IB=500 –100 VBE(sat) — IC (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –30 –30 –30 –10 (3) –10 TC=–25˚C 25˚C 100˚C –10 (1) (2) (3) –3 (2) –1 (1) –3 –3 –1 –1 – 0.3 – 0.3 – 0.3 – 0.1 – 0.1 – 0.3 –1 –3 –10 – 0.1 – 0.1 – 0.3 –1 –3 –10 – 0.1 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) hFE — IC 105 Cob — VCB Collector output capacitance Cob (pF) VCE=–3V 10000 3000 1000 300 100 30 10 3 1 – 0.1 – 0.3 IE=0 f=1MHz TC=25˚C Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP –10 IC –3 –1 300ms t=1ms 10ms Forward current transfer ratio hFE TC=100˚C 104 25˚C –25˚C 103 Collector current IC (A) – 0.3 – 0.1 – 0.03 – 0.01 –1 102 – 0.1 – 0.3 –1 –3 –10 –1 –3 –10 –30 –100 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 2SB939A 2SB939 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 2SB939, 2SB939A Thermal resistance Rth(t) (˚C/W) 102 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3