2SB941

Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB941 2SB941A 2SB941 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit V emitter voltage 2SB941A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.7±0.3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB941 2SB941A 2SB941 2SB941A 2SB941 2SB941A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –1A, IB1 = – 0.1A, IB2 = 0.1A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.375A VCE = –10V, IC = – 0.5A, f = 10MHz 30 0.5 1.2 0.3 –60 –80 70 10 –1.8 –1.2 V V MHz µs µs µs 250 min typ max –200 –200 –300 –300 –1 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. Rank hFE1 1 Power Transistors PC — Ta 50 –6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C –5 2SB941, 2SB941A IC — VCE –10 VCE=–4V IC — VBE Collector power dissipation PC (W) Collector current IC (A) IB=–100mA –4 –80mA –60mA –3 –40mA –30mA –20mA 30 Collector current IC (A) 40 –8 –6 25˚C TC=100˚C –4 –25˚C 20 (1) –2 10 (3) (4) 0 0 20 40 60 (2) –1 –16mA 0 –2 –4 –6 –12mA –8mA –4mA –2 0 80 100 120 140 160 0 –8 –10 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 10000 hFE — IC 10000 VCE=–4V 3000 1000 300 100 30 10 3 fT — IC VCE=–5V f=10MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 25˚C TC=100˚C –25˚C – 0.3 TC=100˚C –25˚C 25˚C – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Transition frequency fT (MHz) –1 –3 –10 3000 –1 –3 –10 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) –100 –30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 –10 ICP –3 –1 DC IC t=1ms 10ms 10 (2) – 0.3 – 0.1 – 0.03 – 0.01 –1 1 2SB941A 10–1 2SB941 –3 –10 –30 –100 –300 –1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2