2SB948A

Power Transistors 2SB948, 2SB948A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1445 and 2SD1445A 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q 16.7±0.3 14.0±0.5 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –40 –50 –20 –40 –5 –20 –10 40 2 150 –55 to +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB948 2SB948A 2SB948 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SB948A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.0 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB948 2SB948A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz IC = –3A, IB1 = – 0.1A, IB2 = 0.1A min typ max –50 –50 Unit µA µA V –20 –40 45 90 260 – 0.6 –1.5 100 400 0.1 0.5 0.1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT Cob ton tstg tf V V MHz pF µs µs µs Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 50 –12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) IB=–100mA –10 –80mA –60mA –50mA –40mA –6 –35mA –30mA –25mA –4 –20mA –15mA –2 –10mA –5mA 0 0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 TC=25˚C 2SB948, 2SB948A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –10 VCE(sat) — IC IC/IB=30 Collector power dissipation PC (W) Collector current IC (A) 40 –3 –8 –1 TC=100˚C 25˚C –25˚C 30 (1) 20 – 0.3 – 0.1 10 (3) (4) 0 (2) – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –10 hFE — IC IC/IB=30 10000 VCE=–2V 10000 3000 1000 300 100 30 10 3 fT — IC VCE=–10V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE –3 TC=–25˚C 100˚C 25˚C 1000 300 100 –25˚C 30 10 3 1 – 0.1 – 0.3 25˚C –1 TC=100˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 Transition frequency fT (MHz) –10 –30 –100 3000 – 0.3 –1 –3 –10 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 10 IE=0 f=1MHz TC=25˚C ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C tstg 0.3 ton 0.1 tf 0.03 Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP t=1ms –10 –3 –1 IC 10ms DC Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 – 0.1 – 0.3 Switching time ton,tstg,tf (µs) 3 1 Collector current IC (A) – 0.3 – 0.1 – 0.03 0.01 –1 –3 –10 –30 –100 0 –1 –2 –3 –4 –5 –6 –7 –8 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB948A –100 2SB948 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 2SB948, 2SB948A Thermal resistance Rth(t) (˚C/W) 102 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3