2SB950

Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB950 2SB950A 2SB950 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 –0.1 +0.2 2.54±0.25 5.08±0.5 1 2 emitter voltage 2SB950A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C B 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB950 2SB950A 2SB950 2SB950A 2SB950 2SB950A E (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat)1 VCE(sat)2 fT ton tstg tf * Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VCE = –30V, IB = 0 VCE = –40V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –3V, IC = – 0.5A VCE = –3V, IC = –3A VCE = –3V, IC = –3A IC = –3A, IB = –12mA IC = –5A, IB = –20mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –3A, IB1 = –12mA, IB2 = 12mA, VCC = –50V min typ max –200 –200 –500 –500 –2 Unit µA µA mA V –60 –80 1000 2000 10000 –2.5 –2 –4 20 0.3 2 0.5 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 V V V MHz µs µs µs Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC — Ta 50 –6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C –5 IB=–3.0mA –2.5mA –2.0mA –1.5mA –1.0mA – 0.5mA –3 – 0.4mA – 0.3mA – 0.2mA –1 2SB950, 2SB950A IC — VCE –10 VCE=–3V IC — VBE Collector power dissipation PC (W) Collector current IC (A) –4 Collector current IC (A) 40 –8 30 –6 TC=100˚C –4 25˚C –25˚C (1) 20 –2 10 (3) (4) 0 0 20 40 60 (2) –2 0 80 100 120 140 160 0 –1 –2 –3 –4 –5 0 0 – 0.8 –1.6 –2.4 –3.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=250 –30 –10 –3 –1 TC=100˚C 25˚C –25˚C 106 hFE — IC 10000 Cob — VCB Collector output capacitance Cob (pF) VCE=–3V IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 3000 1000 300 100 30 10 3 1 – 0.1 – 0.3 105 TC=100˚C 104 25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –25˚C 103 102 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) –100 –30 103 Non repetitive pulse TC=25˚C ICP IC t=1ms 10ms DC Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 –10 –3 –1 10 (2) – 0.3 – 0.1 – 0.03 – 0.01 –1 1 2SB950A 10–1 2SB950 –3 –10 –30 –100 –300 –1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2