2SB951A

Power Transistors 2SB951, 2SB951A Silicon PNP epitaxial planar type Darlington 0.7±0.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –7 –12 –8 45 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB951 2SB951A 2SB951 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 emitter voltage 2SB951A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W B 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB951 2SB951A 2SB951 2SB951A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VEB = –7V, IC = 0 IC = –30mA, IB = 0 VCE = –3V, IC = –4A VCE = –3V, IC = –8A IC = –4A, IB = –8mA IC = –4A, IB = –8mA VCE = –10V, IC = –1A, f = 1MHz IC = –4A, IB1 = –8mA, IB2 = 8mA, VCC = –50V 20 0.5 2 1 –60 –80 2000 500 –1.5 –2 V V MHz µs µs µs 10000 min typ max –100 –100 –2 Unit µA mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q P Rank hFE1 2000 to 5000 4000 to 10000 1 Power Transistors PC — Ta 50 2SB951, 2SB951A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –8 TC=25˚C –7 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA – 0.6mA –3 – 0.4mA –2 –1 0 – 0.2mA –100 VCE(sat) — IC IC/IB=500 Collector power dissipation PC (W) Collector current IC (A) 40 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) –30 –6 –5 –4 –10 30 (1) 20 –3 25˚C TC=100˚C –1 –25˚C 10 (3) (4) 0 0 20 40 60 (2) – 0.3 80 100 120 140 160 0 –1 –2 –3 –4 –5 – 0.1 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) IC/IB=500 –100 VBE(sat) — IC (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –30 –30 –30 –10 (3) –10 TC=–25˚C 25˚C 100˚C –10 (1) (2) (3) –3 (2) –1 (1) –3 –3 –1 –1 – 0.3 – 0.3 – 0.3 – 0.1 – 0.1 – 0.3 –1 –3 –10 – 0.1 – 0.1 – 0.3 –1 –3 –10 – 0.1 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) hFE — IC 105 Cob — VCB Collector output capacitance Cob (pF) VCE=–3V 10000 3000 1000 300 100 30 10 3 1 – 0.1 – 0.3 IE=0 f=1MHz TC=25˚C Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP –10 IC –3 DC –1 t=1ms 10ms Forward current transfer ratio hFE TC=100˚C 104 25˚C –25˚C 103 Collector current IC (A) – 0.3 – 0.1 – 0.03 – 0.01 –1 102 – 0.1 – 0.3 –1 –3 –10 –1 –3 –10 –30 –100 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 2SB951A 2SB951 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 2SB951, 2SB951A Thermal resistance Rth(t) (˚C/W) 102 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3