2SB953

Power Transistors 2SB953, 2SB953A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1444 and 2SD1444A 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB953 2SB953A 2SB953 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) –40 –50 –20 –40 –5 –12 –7 30 2 150 –55 to +150 4.0 14.0±0.5 Solder Dip Ratings Unit V emitter voltage 2SB953A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.7±0.3 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB953 2SB953A 2SB953 2SB953A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = –2A, IB1 = –66mA, IB2 = 66mA Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –2A IC = –5A, IB = – 0.16A IC = –5A, IB = – 0.16A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz 150 140 0.1 0.5 0.1 –20 –40 45 90 260 – 0.6 –1.5 V V MHz pF µs µs µs min typ max –50 –50 –50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. Rank hFE2 1 Power Transistors PC — Ta 50 –6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) IB=–60mA –5 TC=25˚C –50mA –45mA –40mA –35mA –30mA –3 –25mA –20mA –2 –15mA –10mA –1 –5mA 0 0 20 40 60 80 100 120 140 160 0 –1 –2 –3 –4 –5 –6 2SB953, 2SB953A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –10 VCE(sat) — IC IC/IB=30 TC=100˚C –3 25˚C –1 –25˚C Collector power dissipation PC (W) Collector current IC (A) 40 –4 30 – 0.3 (1) 20 – 0.1 10 (3) (4) 0 (2) – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –10 hFE — IC IC/IB=30 10000 VCE=–2V 10000 3000 1000 300 100 30 10 3 fT — IC VCE=–10V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE –3 1000 300 100 30 10 3 1 – 0.1 – 0.3 TC=100˚C 25˚C –1 TC=–25˚C 100˚C 25˚C – 0.3 –25˚C – 0.1 – 0.03 – 0.01 – 0.1 Transition frequency fT (MHz) –10 –30 –100 3000 – 0.3 –1 –3 –10 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 – 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 –10 IE=0 f=1MHz TC=25˚C ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP –10 IC –3 –1 10ms t=1ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 – 0.1 – 0.3 Switching time ton,tstg,tf (µs) –3 –1 tstg ton tf Collector current IC (A) – 0.3 DC – 0.1 – 0.3 – 0.1 – 0.03 – 0.03 – 0.01 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 –100 0 –1 –2 –3 –4 –5 –6 –7 –8 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 2SB953, 2SB953A Thermal resistance Rth(t) (˚C/W) 102 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3