2SB967

Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C) Ratings –27 –18 –7 –8 –5 20 150 –55 to +150 Unit V V V A A W 0.6 2.3 2.3 0.75 6.5±0.2 5.35 4.35 1:Base 2:Collector 3:Emitter U Type Package Unit: mm ˚C ˚C 1 2 3 2.3±0.1 0.5±0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *h (TC=25˚C) Symbol ICBO IEBO VCEO VEBO hFE fT Cob * Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A IC = –3A, IB = – 0.1A VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz min typ max –100 –1 6.0 5.5±0.2 13.3±0.3 1.8 1.0± 0.2 s Features Unit nA µA V V –18 –7 90 625 –1 120 85 VCE(sat) V MHz pF FE Rank classification P 90 to 135 Q 125 to 205 R 180 to 625 Rank hFE 1 Power Transistors PC — Ta 32 –6 TC=Ta 28 –5 IB=–40mA –35mA –30mA –25mA –4 –20mA –15mA –10mA –2 –5mA –1 4 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 –1mA 0 0 – 0.4 – 0.8 –10 TC=25˚C 2SB967 IC — VCE –12 VCE=–2V IC — VBE Collector power dissipation PC (W) Collector current IC (A) 24 20 16 12 8 Collector current IC (A) –8 25˚C TC=100˚C –25˚C –3 –6 –4 –2 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=30 –30 –10 –3 –1 100000 hFE — IC 240 VCE=–2V fT — IE VCB=–6V f=200MHz TC=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) –10 30000 200 10000 160 3000 1000 300 –25˚C 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 TC=100˚C 25˚C 120 – 0.3 – 0.1 – 0.03 TC=100˚C –25˚C 80 40 25˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 1 3 10 30 100 –1 –3 –10 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 200 Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25˚C 160 120 80 40 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2