2SC1215

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0±0.2 4.0±0.2 s Features q High transition frequency fT. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 30 20 3 50 400 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 13.5±0.5 5.1±0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 123 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Common emitter reverse transfer capacitance Transition frequency Power gain Base time constant (Ta=25˚C) Symbol VCBO VEBO hFE VBE VCE(sat) Cre fT* PG rbb' · CC Conditions IC =100µA, IE = 0 IE = 10µA, IC = 0 VCB = 10V, IE = –2mA VCB = 10V, IE = –2mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = –15mA, f = 100MHz VCB = 10V, IE = –1mA, f = 100MHz VCB = 10V, IE = –10mA, f = 450kHz 600 min 30 3 25 0.72 0.1 1 1200 20 25 1.5 1600 V V pF MHz dB ps typ max Unit V V *f T Rank classification Rank T 600 ~ 1300 S 900 ~ 1600 fT(MHz) 1 Transistor PC — Ta 500 24 Ta=25˚C 450 IB=300µA 20 20 250µA 16 200µA 12 150µA 2SC1215 IC — VCE 24 VCE=10V Ta=25˚C IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 18 400 16 12 8 100µA 50µA 8 4 4 0 0 6 12 0 0 150 300 450 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA) IB — VBE 400 VCE=10V Ta=25˚C 350 50 60 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25˚C VCE=10V VCE(sat) — IC IC/IB=10 Collector current IC (mA) Ta=75˚C 40 Base current IB (µA) 300 250 200 150 100 50 0 0 0.6 1.2 1.8 –25˚C 30 Ta=75˚C 25˚C 20 0.1 –25˚C 0.03 0.01 0.1 10 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 240 VCE=10V 1600 1400 fT — I E Ta=25˚C Cre — VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25˚C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) VCE=10V 6V 2.0 1200 1000 800 600 400 200 160 Ta=75˚C 120 25˚C –25˚C 1.6 1.2 80 0.8 40 0.4 0 0.1 0.3 1 3 10 30 100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor Zrb — IE 120 40 f=2MHz Ta=25˚C 100 35 f=100MHz Rg=50Ω Ta=25˚C VCE=10V 6V 2SC1215 PG — IE 12 VCE=10V f=100MHz Rg=50kΩ Ta=25˚C NF — IE Reverse transfer impedance Zrb (Ω) 10 80 Noise figure NF (dB) –100 Power gain PG (dB) 30 25 20 15 10 5 0 – 0.1 – 0.3 8 60 6 40 VCE=6V 10V 0 – 0.1 – 0.3 –1 –3 –10 4 20 2 –1 –3 –10 –30 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) bib — gib 0 0 brb — grb 48 yrb=grb+jbrb VCB=10V 200 300 500 bfb — gfb Forward transfer susceptance bfb (mS) yfb=gfb+jbfb VCB=10V 40 f=200MHz IE=–5mA 32 –2mA 24 500 600 16 300 yrb=grb+jbrb VCB=10V Input susceptance bib (mS) –10 –20 IE=–2mA f=900MHz –5mA 600 500 300 200 Reverse transfer susceptance brb (mS) – 0.4 – 0.8 600 –1.2 f=900MHz –2mA –1.6 IE=–5mA –30 –40 –50 –2.0 8 900 –60 0 10 20 30 40 50 –2.4 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 0 0 –60 –40 –20 0 20 40 Input conductance gib (mS) Reverse transfer conductance grb (mS) Forward transfer conductance gfb (mS) bob — gob 12 yob=gob+jbob VCE=10V 900 Output susceptance bob (mS) 10 600 IE=–2mA 6 500 –5mA 8 4 300 2 f=200MHz 0 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) 3