2SC1359

Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm 5.0±0.2 4.0±0.2 s Features q q Optimum for RF amplification of FM/AM radios. High transition frequency fT. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 30 20 5 30 400 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 13.5±0.5 5.1±0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 123 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25˚C) Symbol ICBO hFE fT NF Zrb Cre * Conditions VCB = 10V, IE = 0 VCB = 10V, IE = –1mA VCB = 10V, IE = –1mA, f = 200MHz VCB = 10V, IE = –1mA, f = 5MHz VCB = 10V, IE = –1mA, f = 2MHz VCE = 10V, IC = 1mA, f = 10.7MHz min typ max 0.1 Unit µA 70 150 250 2.8 22 0.9 220 MHz 4 50 1.5 dB Ω pF *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC — Ta 500 12 Ta=25˚C 450 10 IB=100µA 12.5 2SC1359 IC — VCE 15.0 VCE=10V Ta=25˚C IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 8 80µA Collector current IC (mA) 18 400 10.0 6 60µA 7.5 4 40µA 5.0 2 20µA 2.5 0 0 6 12 0 0 20 40 60 80 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA) IB — VBE 120 VCE=10V Ta=25˚C 100 50 60 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 VCE=10V VCE(sat) — IC IC/IB=10 Collector current IC (mA) Base current IB (mA) 80 40 Ta=75˚C 30 25˚C –25˚C 60 Ta=75˚C 25˚C 40 20 0.1 0.03 0.01 0.1 –25˚C 20 10 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 240 VCE=10V 400 350 300 250 200 150 100 50 0 0.1 0 – 0.1 – 0.3 fT — I E 60 VCB=10V 6V Zrb — IE Reverse transfer impedance Zrb (Ω) Ta=25˚C VCB=10V f=2MHz Ta=25˚C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 50 160 Ta=75˚C 25˚C 40 120 –25˚C 80 30 20 40 10 0.3 1 3 10 30 100 –1 –3 –10 –30 –100 0 – 0.1 – 0.3 –1 –3 –10 Collector current IC (mA) Emitter current IE (mA) Emitter current IE (mA) 2 Transistor Cre — VCE Common emitter reverse transfer capacitance Cre (pF) 3.0 f=10.7MHz Ta=25˚C 2.5 20 24 2SC1359 PG — IE f=100MHz VCB=10V Ta=25˚C 12 VCB=6V f=100MHz Rg=50Ω Ta=25˚C NF — IE 10 2.0 IC=3mA 1.5 1mA 16 Noise figure NF (dB) –1 –3 –10 –30 –100 Power gain PG (dB) 8 12 6 1.0 8 4 0.5 4 2 0 0.1 0.3 1 3 10 30 100 0 – 0.1 – 0.3 0 – 0.1 – 0.3 –1 –3 –10 Collector to emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA) bie — gie 24 0 bre — gre Reverse transfer susceptance bre (mS) Forward transfer susceptance bfe (mS) yie=gie+jbie VCE=10V yre=gre+jbre VCE=10V f=10.7MHz 0 – 0.1mA bfe — gfe f=10.7MHz 58 10.7 –1mA 100 Input susceptance bie (mS) 20 –4mA 16 IE=–1mA – 0.1 IE=–1mA –20 58 –2mA 100 –7mA 100 –2mA 58 – 0.2 –40 12 – 0.3 58 –60 IE=–4mA 100 58 8 f=10.7MHz 66 – 0.4 100 –80 – 0.5 –100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 0 0 8 16 24 32 40 – 0.6 – 0.5 –120 – 0.4 – 0.3 – 0.2 – 0.1 10 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe — goe 1.2 yoe=goe+jboe VCE=10V Output susceptance boe (mS) 1.0 0.8 IE=–1mA 100 0.6 58 0.4 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3