2SC1473

Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –250 –200 –5 –100 –70 750 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 123 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICEO VCEO VEBO hFE fT Cob * Conditions VCE = –120V, IB = 0, Ta = 60˚C IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA IC = –50mA, IB = –5mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f= 1MHz min typ max –1 Unit µA V V –200 –5 60 220 –1.5 50 10 VCE(sat) V MHz pF *h FE Rank classification Q 60 ~ 150 R 100 ~ 220 hFE Rank 1 Transistor PC — Ta 1000 –100 Ta=25˚C 900 –90 IB=–1.0mA –100 25˚C Ta=75˚C –80 2SA1018 IC — VCE –120 VCE=–10V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) – 0.9mA –70 –60 –50 –40 –30 – 0.3mA –20 – 0.2mA –10 0 – 0.1mA – 0.8mA – 0.7mA – 0.6mA – 0.5mA – 0.4mA 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 800 –80 –25˚C –60 –40 –20 0 0 –2 –4 –6 –8 –10 –12 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 25˚C Ta=75˚C –25˚C IC/IB=10 300 hFE — IC 120 VCE=–10V fT — IE VCB=–10V Ta=25˚C Forward current transfer ratio hFE 250 Transition frequency fT (MHz) –10 –30 –100 100 200 Ta=75˚C 150 25˚C 100 –25˚C 80 60 – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 40 50 20 –1 –3 –10 –30 –100 0 – 0.1 – 0.3 –1 –3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 20 10000 IE=0 f=1MHz Ta=25˚C 3000 1000 ICEO — Ta VCE=–120V Collector output capacitance Cob (pF) 18 16 ICEO (Ta) ICEO (Ta=25˚C) –3 –10 –30 –100 14 12 10 8 6 300 100 30 10 4 2 0 –1 3 1 0 40 80 120 160 200 240 Collector to base voltage VCB (V) Ambient temperature Ta (˚C) 2