2SC1847

Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0886 φ 3.16±0.1 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 40 5 1.5 3 1.2 150 −55 to +150 Unit V V V A A W °C °C 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 1 A IC = 2 A, IB = 0.2 A IC = 2 A, IB = 0.2 A VCB = 5 V, IE = − 0.5 A, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 150 35 80 Min 50 40 1 100 10 220 1 1.5 Typ Max Unit V V µA µA µA  V V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 80 to 160 R 120 to 220 16.0±1.0 • Output of 4 W can be obtained by a complementary pair with 2SA0886 • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3.05±0.1 ■ Features 3.8±0.3 11.0±0.5 Publication date: February 2003 SJD00095BED 1 2SC1847 PC  Ta 1.6 4.0 3.5 IC  VCE TC=25˚C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC/IB=10 1 TC=100˚C 25˚C Collector power dissipation PC (W) Collector current IC (A) 1.2 3.0 2.5 2.0 1.5 1.0 IB=40mA 35mA 30mA 25mA 20mA 15mA 10mA 0.1 –25˚C 0.8 0.01 0.4 5mA 0.5 0 0 0 40 80 120 160 0 2 4 6 8 10 0.001 0.01 0.1 1 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat)  IC Base-emitter saturation voltage VBE(sat) (V) IC/IB=10 hFE  IC 240 VCE=5V fT  I E VCB=5V f=200MHz TC=25˚C 10 1000 Forward current transfer ratio hFE TC=100˚C 25˚C –25˚C Transition frequency fT (MHz) 200 160 1 TC=–25˚C 100˚C 25˚C 100 120 0.1 10 80 40 0.01 0.01 0.1 1 1 0.01 0.1 1 0 −0.01 −0.1 −1 −10 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 120 VCER  RBE Collector-emitter voltage (V) (Resistor between B and E) VCER IE=0 f=1MHz TC=25˚C ICBO  Ta 1000 TC=25˚C 60 VCB=20V 100 50 60 30 ICBO (Ta) ICBO (Ta = 25°C) 0.01 0.1 1 10 80 40 100 40 20 10 20 10 0 1 10 100 0 0.001 1 0 20 40 60 80 100 Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ) Ambient temperature Ta (°C) 2 SJD00095BED 2SC1847 Safe operation area 10 ICP Single pulse TC=25˚C Rth  t 104 (1)Without heat sink (2)With a 100×100×2mm Al heat sink Collector current IC (A) 1 IC t=1s t=10ms Thermal resistance Rth (°C/W) 103 102 (1) (2) 0.1 10 0.01 1 0.001 0.1 1 10 100 10−1 10−4 10−3 10−2 10−1 1 10 102 103 104 Collector-emitter voltage VCE (V) Time t (s) SJD00095BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL