2SC1980

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 5.0±0.2 Unit: mm 4.0±0.2 q q High collector to emitter voltage VCEO. Low noise voltage NV. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 120 120 7 50 20 250 150 –55 ~ +150 Unit V V V 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 123 2.3±0.2 mA mA mW ˚C ˚C 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT NV * Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 2mA IC = 20mA, IB = 2mA VCB = 5V, IE = –2mA, f = 200MHz VCE = 40V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max 0.1 1 Unit µA µA V V V 120 120 7 180 700 0.6 200 150 VCE(sat) V MHz mV *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC — Ta 500 24 Ta=25˚C 450 20 IB=50µA 45µA 40µA 16 35µA 30µA 12 25µA 20µA 15µA 4 10µA 5µA 0 0 40 80 120 160 200 0 2 4 6 8 10 12 0 0 0.4 0.8 50 25˚C 2SC1980 IC — VCE 60 VCE=10V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 400 350 300 250 200 150 100 50 0 Ta=75˚C 40 –25˚C 30 8 20 10 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 Ta=75˚C IC/IB=10 1200 hFE — IC 800 VCE=10V fT — I E VCB=5V Ta=25˚C Forward current transfer ratio hFE 1000 Transition frequency fT (MHz) 3 10 30 100 700 600 500 400 300 200 100 800 Ta=75˚C 600 25˚C –25˚C 400 200 0.3 1 3 10 30 100 0 0.1 0.3 1 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 8 160 IE=0 f=1MHz Ta=25˚C 140 NV — IC VCE=10V GV=80dB Function=FLAT Collector output capacitance Cob (pF) 7 6 5 4 3 2 1 0 1 3 10 Noise voltage NV (mV) 120 100 80 60 22kΩ 40 4.7kΩ 20 0 0.01 Rg=100kΩ 30 100 0.03 0.1 0.3 1 Collector to base voltage VCB (V) Collector current IC (mA) 2