2SC2188

Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 45 35 4 50 600 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Power gain (Ta=25˚C) Symbol ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cre PG Conditions VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 10V, IE = –10mA IC = 20mA, IB = 2mA VCB = 10V, IE = –10mA, f = 100MHz VCE = 10V, IC = 1mA VCB = 10V, IE = –10mA, f = 58MHz 18 300 500 1.5 45 35 4 20 50 100 0.5 V MHz pF dB min typ max 10 Unit µA V V V 4.1±0.2 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.0±0.1 R 0. 4.5±0.1 7 1 Transistor PC — Ta 800 80 70 2SC2188 IC — VCE 60 25˚C VCE=10V IC — VBE Collector power dissipation PC (mW) 700 Collector current IC (mA) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 60 1.6mA 50 40 30 20 10 0 0 2 4 6 8 10 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA Collector current IC (mA) IB=2.0mA 1.8mA 50 Ta=75˚C 40 –25˚C 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C Ta=75˚C IC/IB=10 120 hFE — IC 600 VCE=10V VCB=10V Ta=25˚C fT — I E Forward current transfer ratio hFE 100 Transition frequency fT (MHz) 10 30 100 500 80 Ta=75˚C 60 25˚C 40 –25˚C 400 300 200 20 100 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C Cre — VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25˚C 30 PG — IE VCB=10V f=58MHz Ta=25˚C 3.0 2.5 2.0 25 2.0 1.6 Power gain PG (dB) 1 3 10 30 100 20 1.5 1.2 15 1.0 0.8 10 0.5 0.4 5 0 1 3 10 30 100 0 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Emitter current IE (mA) 2