2SC2631

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier. (Ta=25˚C) Ratings –150 –150 –5 –100 –50 750 150 –55 ~ +150 Unit 13.5±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 V V mA mA mW ˚C ˚C 123 2.3±0.2 V 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob NV * Conditions VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max –1 Unit µA V V –150 –5 130 450 –1 200 5 150 300 VCE(sat) V MHz pF mV *h FE Rank classification R 130 ~ 220 S 185 ~ 330 T 260 ~ 450 hFE Rank 1 Transistor PC — Ta 1.0 –80 Ta=25˚C –70 –100 25˚C Ta=75˚C –80 2SA1123 IC — VCE –120 VCE=–5V IC — VBE Collector power dissipation PC (W) 0.9 Collector current IC (mA) –60 –50 –40 –30 –20 –10 0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 0.8 IB=–500µA –450µA –400µA –350µA –300µA –250µA –200µA –150µA –100µA –50µA –25˚C –60 –40 –20 0 0 –2 –4 –6 –8 –10 –12 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C IC/IB=10 600 hFE — IC 300 VCE=–5V fT — IE VCB=–10V Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) –10 –30 –100 250 400 Ta=75˚C 300 200 25˚C –25˚C 150 – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 200 100 100 50 –1 –3 –10 –30 –100 0 – 0.1 – 0.3 0 –1 –3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 6 Collector output capacitance Cob (pF) 5 IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2