2SC2925

Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 q q High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 60 50 15 1.5 0.7 750 150 –55 ~ +150 Unit V V V 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 2.3±0.2 A A mW ˚C ˚C 123 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA IC = 500mA, IB = 50mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 60 50 15 400 1000 0.15 200 11 15 2000 0.4 V MHz pF min typ max 1 10 Unit µA µA V V V *h FE Rank classification R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000 Rank 1 Transistor PC — Ta 1.0 120 Ta=25˚C IB=100µA 90µA 80µA 70µA 60µA 60 50µA 40µA 40 30µA 20 20µA 10µA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 2SC2925 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.01 0.03 Ta=75˚C 25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) Collector current IC (mA) 0.8 100 80 0.6 0.4 0.2 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=10 2400 VCE=10V 400 fT — I E VCB=10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 2000 Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 25˚C 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75˚C Forward current transfer ratio hFE 350 300 250 200 150 100 50 1600 Ta=75˚C 25˚C –25˚C 800 1200 400 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –1 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob — VCB 40 Collector output capacitance Cob (pF) f=1MHz Ta=25˚C 35 30 25 20 15 10 5 0 1 3 10 30 100 Collector to base voltage VCB (V) 2