2SC3130

Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 2.8 –0.3 +0.2 s Features q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 q High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 3 0.4 –0.05 +0.1 2 1.45 1.1 –0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 10 3 50 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1S s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Base time constant Common emitter reverse transfer capacitance hFE ratio (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob rbb' · CC Crb ∆hFE * Conditions VCB = 10V, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = –5mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = –5mA, f = 31.9MHz VCB = 4V, IE = 0, f = 1MHz VCE = 4V, IC = 100µA VCE = 4V, IC = 5mA min typ 0 to 0.1 s Absolute Maximum Ratings (Ta=25˚C) 0.1 to 0.3 0.4±0.2 0.8 max 1 0.16 –0.06 +0.2 +0.1 Unit µA V V 10 3 75 200 400 0.5 1.4 1.9 1.4 11 0.45 0.75 1.6 2.5 VCE(sat) V GHz pF ps pF *h FE Rank classification Rank hFE P 75 ~ 130 1SP Q 110 ~ 220 1SQ R 200 ~ 400 1SR Marking Symbol 1 Transistor PC — Ta 200 80 TC=Ta 70 Ta=25˚C 50 2SC3130 IC — VCE 60 VCE=4V 25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 60 50 40 30 20 100µA 10 Collector current IC (mA) 160 Ta=75˚C 40 –25˚C 120 IB=500µA 400µA 300µA 200µA 30 80 20 40 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C –25˚C Ta=75˚C IC/IB=10 360 hFE — IC 4.0 VCE=4V fT — I E VCB=4V Ta=25˚C Forward current transfer ratio hFE 300 Ta=75˚C 240 Transition frequency fT (GHz) 10 30 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 180 25˚C 120 –25˚C 60 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 1.6 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 IE=0 f=1MHz Ta=25˚C 30 100 Collector to base voltage VCB (V) 2