2SC3496

Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching 8.5±0.2 Unit: mm 3.4±0.3 1.0±0.1 6.0±0.2 ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 10.0±0.3 1.5±0.1 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C 1 2 Collector-base voltage (Emitter open) 2SC3496 2SC3496A VCBO VCES VCEO VEBO IB IC ICP PC 900 1 000 900 1 000 800 900 7 0.3 1 2 30 1.3 V (6.5) Collector-emitter voltage 2SC3496 (E-B short) 2SC3496A Collector-emitter voltage 2SC3496 (Base open) 2SC3496A Emitter-base voltage (Collector open) Base current Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 2 5 °C V V 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. V A A A W °C °C Tj Tstg 150 −55 to +150 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SC3496 2SC3496A 2SC3496 2SC3496A IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = 900 V, IE = 0 VCB = 1 000 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 0.05 A VCE = 5 V, IC = 0.5 A IC = 0.2 A, IB = 0.04 A IC = 0.2 A, IB = 0.04 A VCE = 10 V, IC = 0.05 A, f = 1 MHz IC = 0.2 A IB1 = 0.04 A, IB2 = − 0.08 A VCC = 250 V 4 1.0 3.0 1.0 6 3 1.5 1.0 V V MHz µs µs µs Symbol VCEO Conditions IC = 1 mA, IB = 0 Min 800 900 50 50 50 µA  µA Typ Max Unit V Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2003 SJD00104AED (7.6) Parameter Symbol Rating Unit (1.5) 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 2.0±0.5 4.4±0.5 0 to 0.4 14.4±0.5 3.0+0.4 –0.2 1.5+0 –0.4 1 2SC3496, 2SC3496A PC  Ta 50 1.2 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) (1) TC=25˚C IB=200mA IC  VCE Collector-emitter saturation voltage VCE(sat) (V) IC/IB=5 VCE(sat)  IC TC=100˚C 25˚C Collector power dissipation PC (W) 40 1.0 Collector current IC (A) 1 0.8 30 0.6 20 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA –25˚C 0.1 0.4 10 (2) (3) 0.2 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0.01 0.01 0.1 1 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat)  IC IC/IB=5 hFE  IC 1 000 VCE=5V fT  I C VCE=10V f=1MHz TC=25˚C Base-emitter saturation voltage VBE(sat) (V) 100 Forward current transfer ratio hFE 1 TC=–25˚C 100˚C 25˚C TC=100˚C Transition frequency fT (MHz) 1 25˚C 100 10 –25˚C 10 0.1 1 1 0.01 0.01 0.1 1 0.1 0.01 0.1 0.1 0.001 0.01 0.1 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton , tstg , tf  IC Turn-on time ton , Storage time tstg , Fall time tf (µs) 100 Pulsed tw=1ms Duty cycle=1% Safe operation area 10 ICP Collector current IC (A) 10 IC/IB=5(2IB1=–IB2) VCC=250V TC=25˚C 1 IC 300ms t=10ms 1 tstg 0.1 0.1 ton tf 0.01 2SC3496A 2SC3496 0.01 0 0.2 0.4 0.6 0.8 1.0 0.001 Non repetitive pulse TC=25˚C 1 10 100 1 000 Collector current IC (A) Collector-emitter voltage VCE (V) 2 SJD00104AED 2SC3496, 2SC3496A Safe operation area (Reverse bias) 4 L=100µH IC/IB=5 (2IB1=–IB2) TC=125˚C Safe operation area (Reverse bias) measurement circuit L IB1 T.U.T IC Collector current IC (A) 3 2 ICP VIN −IB2 VCC 1 IC tw 0 0 400 800 1200 1600 VCLAMP Collector-emitter voltage VCE (V) Rth  t 102 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) Thermal resistance Rth (°C/W) 10 (2) 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00104AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL