2SC3707

Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit: mm 2.8 –0.3 +0.2 s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 2 1.1 –0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 10 7 2 10 50 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Bae 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 2X s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Symbol ICBO IEBO hFE fT Cob | S21e NF |2 GUM Conditions VCB = 10V, IE = 0 VEB = 1.5V, IC = 0 VCE = 1V, IC = 1mA VCE = 1V, IC = 1mA, f = 800MHz VCB = 1V, IE = 0, f = 1MHz VCE = 1V, IC = 1mA, f = 800MHz VCE = 1V, IC = 1mA, f = 800MHz VCE = 1V, IC = 1mA, f = 800MHz 50 100 4 0.4 6 15 3.5 min typ max 1 1 150 GHz pF dB dB dB Unit nA µA Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure. 0 to 0.1 s Absolute Maximum Ratings (Ta=25˚C) 0.1 to 0.3 0.4±0.2 0.8 0.16 –0.06 +0.2 +0.1 0.4 –0.05 Possible with the small current and low voltage. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 +0.1 1.45 1 Transistor PC — Ta 100 6 Ta=25˚C IB=50µA 5 45µA 40µA 4 35µA 30µA 25µA 20µA 2 15µA 10µA 1 5µA 50 2SC3707 IC — VCE 60 VCE=1V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 75 Collector current IC (mA) 40 25˚C Ta=75˚C 30 –25˚C 50 3 20 25 10 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C –25˚C IC/IB=10 240 hFE — IC 12 VCE=1V fT — IC VCE=1V f=800MHz Ta=25˚C Forward current transfer ratio hFE 200 Transition frequency fT (GHz) 10 30 100 10 160 Ta=75˚C 120 25˚C 80 –25˚C 40 8 6 4 2 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C GUM — IC Maximum unilateral power gain GUM (dB) 24 VCE=1V f=800MHz Ta=25˚C 6 NF — IC VCE=1V (Rg=50Ω) f=800MHz Ta=25˚C 1.2 1.0 20 5 0.8 16 Noise figure NF (dB) 0.3 1 3 10 30 100 4 0.6 12 3 0.4 8 1 0.2 4 1 0 0.1 0.3 1 3 10 30 100 0 0.1 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) 2