2SC3757

Transistors 2SC3757 Silicon NPN epitaxial planer type Unit: mm For high speed switching I Features • High-speed switching • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. • Allowing pair use with 2SA1738 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 (0.65) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC PC Tj Tstg Rating 40 40 5 300 100 200 150 −55 to +150 Unit V V V mA mA mW °C °C 1: Base 2: Emitter 3: Collector 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Marking Symbol: 2Y I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio * Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 15 V, IE = 0 VEB = 4 V, IC = 0 VCE = 1 V, IC = 10 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = −10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Refere to the measurement circuit Min Typ Max 0.1 0.1 Unit µA µA V V MHz 60 0.17 200 0.25 1.0 450 2 17 17 10 6 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time Note) *: Rank classification Rank hFE Marking symbol Q 60 to 120 2YQ pF ns ns ns R 90 to 200 2YR 0.4±0.2 5° 1 2SC3757 Switching time measurement circuit ton , toff Test circuit 0.1 µF VOUT VIN = 10 V 3.3 kΩ 50 Ω 220 Ω 3.3 kΩ VDD = −3 V 50 Ω VCC = 3 V VIN = 10 V 50 Ω A 910 Ω 500 Ω 500 Ω VDD = 2 V Transistors PC  Ta tstg Test circuit 0.1 µF 1 kΩ 90 Ω VOUT 240 Collector power dissipation PC (mW) 200 160 VCC = 10 V 120 VIN VOUT 10% VIN 10% 90% 0 VIN VOUT 80 10% 10% tstg 90% VOUT ton toff 40 0 (Waveform at A) 0 40 80 120 160 Ambient temperature Ta (°C) IC  VCE Collector to emitter saturation voltage VCE(sat) (V) 120 Ta = 25°C IB = 3.0 mA 2.5 mA 2.0 mA 1.5 mA 60 1.0 mA 40 0.5 mA 20 100 30 10 3 1 VCE(sat)  IC Base to emitter saturation voltage VBE(sat) (V) IC / IB = 10 100 30 10 3 1 VBE(sat)  IC 100 Collector current IC (mA) 80 0.3 0.1 0.03 0.01 0.1 25°C Ta = 75°C −25°C Ta = −25°C 25°C 75°C 0.3 0.1 0.03 0.01 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 1 3 10 30 100 1 3 10 30 100 300 1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE  IC 600 VCE = 1 V fT  I E 600 6 Cob  VCB Collector output capacitance Cob (pF) VCB = 10 V Ta = 25°C IE = 0 f = 1 MHz Ta = 25°C Forward current transfer ratio hFE Transition frequency fT (MHz) 500 500 5 400 400 4 300 300 3 200 Ta = 75°C 25°C −25°C 200 2 100 100 1 0 0.1 0.3 1 3 10 30 100 0 −1 −3 −10 −30 −100 −300 −1 000 0 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2