2SC3868

Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 500 400 7 3 1.5 0.5 25 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.8A IC = 0.8A, IB = 0.16A IC = 0.8A, IB = 0.16A VCE = 10V, IC = 0.2A, f = 10MHz IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A, VCC = 150V 25 0.7 2 0.3 400 15 8 1 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V 1 Power Transistors PC — Ta 40 2.0 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) (1) TC=25˚C 1.8 IB=200mA 2SC3868 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC IC/IB=5 Collector power dissipation PC (W) 35 30 25 20 15 10 5 (3) 0 0 20 40 (2) Collector current IC (A) 1.6 1.4 1.2 1.0 60mA 0.8 0.6 0.4 0.2 0 40mA 30mA 20mA 10mA 120mA 100mA 80mA 3 TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.03 60 80 100 120 140 160 0 2 4 6 8 10 0.01 0.01 0.03 0.1 0.3 1 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 1000 hFE — IC IC/IB=5 VCE=5V 1000 300 100 30 10 3 1 0.3 1 0.01 fT — IC VCE=10V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 300 3 25˚C 1 TC=–25˚C 100˚C 0.3 100 25˚C TC=100˚C 30 –25˚C 10 0.1 0.03 3 0.01 0.01 Transition frequency fT (MHz) 1 0.03 0.1 0.3 1 3 0.03 0.1 0.3 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C ton Area of safe operation (ASO) 10 3 ICP Non repetitive pulse TC=25˚C t=0.5ms 1ms 10ms DC Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (µs) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 tf 1 0.3 0.1 0.03 0.01 0.003 0.001 IC tstg 0.3 1 3 10 30 100 0 0.5 1.0 1.5 2.0 2.5 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 Lcoil=200µH IC/IB1=5 (2IB1=–IB2) TC=25˚C 2SC3868 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 ICP –IB2 VCC IC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) — t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3