2SC3869

Power Transistors 2SC3869 Silicon NPN triple diffusion planar type For high-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 500 400 7 10 5 1.5 35 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 2A IC = 2A, IB = 0.4A IC = 2A, IB = 0.4A VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 0.4A, IB2 = – 0.8A, VCC = 150V 15 0.7 2.0 0.3 400 15 8 1.0 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V 1 Power Transistors PC — Ta 60 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) TC=25˚C IB=700mA 5 600mA 500mA 400mA 4 300mA 200mA 150mA 2 100mA 50mA 1 20mA 7 2SC3869 IC — VCE 8 IC/IB=5 TC=25˚C IC — VCE(sat) Collector power dissipation PC (W) 50 Collector current IC (A) Collector current IC (A) 6 5 4 3 2 1 0 40 (1) 30 3 20 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 10 0 0 2 4 6 8 10 12 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) IC — VCE(sat) 8 7 IC/IB=5 TC=25˚C 1000 hFE — IC 1000 VCE=5V TC=25˚C 300 Cob — VCB VCE=10V TC=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) 3 10 300 Collector current IC (A) 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 100 100 30 TC=–25˚C 30 10 25˚C 125˚C 10 3 3 1 0.01 0.03 0.1 0.3 1 1 0.01 0.03 0.1 0.3 1 3 10 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) Collector current IC (A) ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C Switching time ton,tstg,tf (µs) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 0 1 2 tstg 10 t=1ms 3 1 0.3 0.1 0.03 0.01 10ms DC ton tf 3 4 1 3 10 30 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SC3869 Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3