2SC3931

Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 s Features q q q 0.425 1.25±0.1 0.425 Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 15 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : U s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency Common emitter reverse transfer capacitance Power gain Noise figure (Ta=25˚C) Symbol VCBO VEBO hFE* VBE fT Cre PG NF Conditions IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 6V, IE = –1mA VCB = 6V, IE = 1mA VCB = 6V, IE = –1mA, f = 200MHz VCE = 6V, IC = 1mA, f = 10.7MHz VCB = 6V, IE = –1mA, f = 100MHz VCB = 6V, IE = –1mA, f = 100MHz 450 min 30 3 65 0.72 650 0.8 24 3.3 1 260 V MHz pF dB dB typ max Unit V V *h FE Rank classification Rank hFE Marking Symbol C 65 ~ 160 UC D 100 ~ 260 UD 0.15–0.05 +0.1 s Absolute Maximum Ratings (Ta=25˚C) 0.2 0.3–0 +0.1 1 Transistor PC — Ta 240 12 Ta=25˚C 200 10 IB=100µA 10 2SC3931 IC — VCE 12 VCE=6V Ta=25˚C IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 160 8 80µA 60µA Collector current IC (mA) 18 8 120 6 40µA 6 80 4 4 40 2 20µA 2 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 60 120 180 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA) IC — VBE Collector to emitter saturation voltage VCE(sat) (V) 30 VCE=6V 25 25˚C 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) — IC IC/IB=10 360 hFE — IC VCE=6V Forward current transfer ratio hFE 300 Collector current IC (mA) Ta=75˚C 20 –25˚C 240 Ta=75˚C 25˚C 120 –25˚C 15 180 10 25˚C Ta=75˚C 5 –25˚C 60 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT — IE 1200 120 Zrb — IE Reverse transfer impedance Zrb (Ω) VCB=6V Ta=25˚C VCB=6V f=2MHz Ta=25˚C Cre — VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25˚C Transition frequency fT (MHz) 1000 100 2.0 800 80 1.6 600 60 1.2 400 40 0.8 200 20 0.4 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 0 – 0.1 – 0.3 –1 –3 –10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor Cob — VCB 1.2 2SC3931 PG — IE IE=0 f=1MHz Ta=25˚C 40 35 f=100MHz Rg=50Ω Ta=25˚C VCE=10V 6V 12 NF — IE f=100MHz Rg=50kΩ Ta=25˚C Collector output capacitance Cob (pF) 1.0 10 0.8 Noise figure NF (dB) Power gain PG (dB) 30 25 20 15 10 5 8 0.6 6 0.4 4 VCE=6V, 10V 0.2 2 0 0 5 10 15 20 25 30 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Emitter current IE (mA) Emitter current IE (mA) bie — gie 20 18 bre — gre 0 bfe — gfe Forward transfer susceptance bfe (mS) 10.7 25 0 – 0.4mA –1mA 100 150 –2mA 10.7 58 Reverse transfer susceptance bre (mS) yie=gie+jbie VCE=10V 150 –4mA 100 yre=gre+jbre VCE=10V –1 –4mA –2 Input susceptance bie (mS) 16 14 12 58 –2mA 100 –7mA –20 –1mA 58 IE=–7mA –40 150 –4mA 100 58 10 8 6 4 2 –1mA IE=– 0.5mA –3 –60 f=150MHz IE=–7mA 100 58 –4 100 –80 25 25 –5 f=150MHz –6 – 0.5 – 0.4 – 0.3 – 0.2 – 0.1 0 –100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 f=10.7MHz 0 0 3 6 9 12 15 –120 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe — goe IE=– 0.5mA –1mA 1.2 150 –2mA –4mA 100 Output susceptance boe (mS) 1.0 0.8 –7mA 0.6 58 0.4 25 0.2 f=10.7MHz 0 0 2 4 6 8 10 yoe=goe+jboe VCE=10V Output conductance goe (mS) 3