2SC3935

Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 2.1±0.1 s Features q q 0.425 1.25±0.1 0.425 q High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 10 3 50 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : 1S s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Common emitter reverse transfer capacitance Base time constant hFE ratio (Ta=25˚C) Symbol ICBO ICEO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob Crb rbb' · CC hFE(RATIO) Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 2.4V, IC = 7.2mA VCE = 2.4V, IC = 100µA IC = 20mA, IB = 4mA VCE = 2.4V, IC = 7.2mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = –5mA, f = 31.9MHz VCE = 2.4V, IC = 100µA VCE = 2.4V, IC = 7.2mA 0.75 1.4 1.9 0.9 0.25 11.8 10 3 75 75 0.5 2.5 1.1 0.35 13.5 1.6 V GHz pF pF ps 220 min typ max 1 10 Unit µA µA V V *1h FE Rank classification P 75 ~ 130 Q 110 ~ 220 Rank hFE 0.15–0.05 +0.1 s Absolute Maximum Ratings 0.2 0.3–0 +0.1 1 Transistor PC — Ta 200 80 TC=Ta 70 Ta=25˚C 50 2SC3935 IC — VCE 60 25˚C VCE=4V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 60 50 40 30 20 100µA 10 Collector current IC (mA) 160 Ta=75˚C 40 –25˚C 120 IB=500µA 400µA 300µA 200µA 30 80 20 40 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C –25˚C Ta=75˚C IC/IB=10 360 hFE — IC 4.0 VCE=4V fT — I E VCB=4V Ta=25˚C Forward current transfer ratio hFE 300 Ta=75˚C 240 Transition frequency fT (GHz) 10 30 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 180 25˚C 120 –25˚C 60 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 1.6 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 IE=0 f=1MHz Ta=25˚C 30 100 Collector to base voltage VCB (V) 2