2SC3937

Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1±0.1 s Features q q q q 0.425 1.25±0.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 (Ta=25˚C) Ratings 15 10 2 80 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : 2W s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Noise figure Maximum unilateral power gain Foward transfer gain (Ta=25˚C) Symbol ICBO IEBO hFE1 hFE2 fT Cob NF GUM | S21e |2 Conditions VCB = 15V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCE = 1V, IC = 3mA VCE = 8V, IC = 20mA, f = 800MHz VCE = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 7mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz 50 80 6 0.7 1 14 13 1.2 1.7 150 min typ max 1 1 300 280 GHz pF dB dB dB Unit µA µA 0.15–0.05 +0.1 0.3–0 +0.1 1 Transistor PC — Ta 240 60 2SC3937 IC — VCE IB=400µA 120 Ta=25˚C 350µA 300µA 40 250µA 200µA 150µA 20 100µA 50µA 100 VCE=8V IC — VBE Collector power dissipation PC (mW) 200 50 Collector current IC (mA) Collector current IC (mA) 160 80 Ta=75˚C 60 25˚C –25˚C 120 30 80 40 40 10 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 Ta=75˚C, 25˚C, –25˚C 0.3 0.03 0.01 0.1 IC/IB=10 600 hFE — IC 12 VCE=8V fT — IC VCE=8V f=800MHz Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (GHz) 30 100 10 400 Ta=75˚C 300 25˚C 200 –25˚C 100 8 6 4 2 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C GUM — IC Maximum unilateral power gain GUM (dB) 24 VCE=8V f=800MHz Ta=25˚C 6 NF — IC VCE=8V (Rg=50Ω) f=800MHz Ta=25˚C 2.4 2.0 20 5 1.6 16 Noise figure NF (dB) 0.3 1 3 10 30 100 4 1.2 12 3 0.5 8 2 0.4 4 1 0 0.1 0.3 1 3 10 30 100 0 0.1 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) 2