2SC3939

Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1533 5.0±0.2 4.0±0.2 Unit: mm q q q High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 80 80 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 123 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 Unit µA V V V 80 80 5 130 50 100 0.2 0.85 120 11 *2 330 0.4 1.2 V V MHz 20 pF Pulse measurement *1h FE1 Rank classification R 130 ~ 220 S 185 ~ 330 Rank hFE1 1 Transistor PC — Ta 1.2 1.2 Ta=25˚C IB=10mA 8mA 7mA 6mA 5mA 0.6 4mA 3mA 0.4 2mA 0.2 1mA 2SC3939 IC — VCE 1.2 VCE=10V Ta=25˚C 1.0 IC — I B Collector power dissipation PC (W) 1.0 1.0 Collector current IC (A) 0.8 0.8 Collector current IC (A) 9mA 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25˚C 1 75˚C 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=–25˚C IC/IB=10 300 hFE — IC VCE=10V Forward current transfer ratio hFE 250 Ta=75˚C 25˚C 150 –25˚C 200 100 50 0 1 3 10 30 100 300 1000 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT — IE 200 Cob — VCB Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 50 IE=0 f=1MHz Ta=25˚C 40 103 104 VCB=20V ICBO — Ta Transition frequency fT (MHz) 160 120 30 ICBO (Ta) ICBO (Ta=25˚C) 1 3 10 30 100 102 80 20 10 10 40 0 –1 0 –3 –10 –30 –100 1 0 60 120 180 Emitter current IE (mA) Collector to base voltage VCB (V) Ambient temperature Ta (˚C) 2 Transistor ICEO — Ta 105 VCE=10V 10 3 2SC3939 Area of safe operation (ASO) Single pulse Ta=25˚C Collector current IC (A) 104 1 0.3 ICP IC t=10ms ICEO (Ta) ICEO (Ta=25˚C) 103 DC 0.1 0.03 0.01 0.003 t=1s 102 10 1 0 20 40 60 80 100 120 140 0.001 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 3