2SC3941

Transistor 2SC3941 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SB1221 Unit: mm 5.0±0.2 4.0±0.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 300 300 7 100 70 1 150 –55 ~ +150 Unit V V V 123 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. 0.7±0.1 0.7±0.2 s Features 8.0±0.2 0.45 –0.1 +0.15 2.3±0.2 mA mA W ˚C ˚C 2.54±0.15 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob * Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 1µA, IC = 0 VCB = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 2 Unit µA V V 300 7 30 220 1.2 50 80 4 8 VCE(sat) V MHz pF *h FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE Rank 1 Transistor PC — Ta 1.2 120 2SC3941 IC — VCE 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 80 0.8mA 0.6mA 0.4mA 40 0.2mA 20 120 Ta=25˚C IB=2mA 100 25˚C VCE=10V IC — VBE Collector power dissipation PC (W) 1.0 100 Collector current IC (mA) Collector current IC (mA) Ta=75˚C 80 –25˚C 0.8 0.6 60 60 0.4 40 0.2 20 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC — IB Collector to emitter saturation voltage VCE(sat) (V) 120 VCE=10V Ta=25˚C 100 100 30 VCE(sat) — IC IC/IB=10 3.0 IB — VBE VCE=10V Ta=25˚C 2.5 Collector current IC (mA) 80 Base current IB (mA) 100 10 3 1 0.3 0.1 0.03 0.01 0.1 Ta=75˚C 2.0 60 1.5 40 25˚C –25˚C 1.0 20 0.5 0 0 0.4 0.8 1.2 1.6 2.0 0 0.3 1 3 10 30 0 0.2 0.4 0.6 0.8 1.0 Base current IB (mA) Collector current IC (mA) Base to emitter voltage VBE (V) hFE — IC 360 VCE=10V 160 140 120 100 80 60 40 20 0 0.1 0 –1 fT — I E 10 Cob — VCB Collector output capacitance Cob (pF) VCB=10V Ta=25˚C IE=0 f=1MHz Ta=25˚C 8 Forward current transfer ratio hFE 300 240 Transition frequency fT (MHz) 6 180 Ta=75˚C 120 25˚C –25˚C 60 4 2 0 –3 –10 –30 –100 1 3 10 30 100 0.3 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor ICBO — Ta 104 VCB=250V 104 2SC3941 IEBO — Ta VEB=5V Area of safe operation (ASO) 1000 300 Single pulse Ta=25˚C Collector current IC (mA) 103 103 100 30 10 3 1 0.3 ICP IC DC t=1ms t=10ms ICBO (Ta) ICBO (Ta=25˚C) 102 IEBO (Ta) IEBO (Ta=25˚C) 102 10 10 1 0 40 80 120 160 200 1 0 40 80 120 160 200 0.1 1 3 10 30 100 300 1000 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 3