2SC3943

Power Transistors 2SC3943 Silicon NPN epitaxial planar type For video amplifier 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q Small transition frequency fT Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 (TC=25˚C) Ratings 110 100 50 3.5 300 150 8 2.0 150 –55 to +150 Unit V V V V mA mA W ˚C ˚C Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCER VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (TC=25˚C) Symbol ICEO VCBO VCER VCEO VEBO hFE VCE(sat) fT1 fT2 Cob Conditions VCE = 35V, IB = 0 IC = 100µA, IE = 0 IC = 500µA, RBE = 470Ω IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 5V, IC = 100mA IC = 150mA, IB = 15mA VCE = 10V, IC = 10mA, f = 10MHz VCE = 10V, IC = 110mA, f = 10MHz VCB = 30V, IE = 0, f = 1MHz 300 350 3.5 110 100 50 3.5 20 0.5 V MHz MHz pF min typ max 10 Unit µA V V V V 1 Power Transistors PC — Ta 12 TC=Ta 240 TC=25˚C 200 IB=5.0mA 4.5mA 4.0mA 3.5mA 120 3.0mA 2.5mA 80 2.0mA 1.5mA 40 1.0mA 0.5mA 0 0 40 80 120 160 200 0 0 2 4 6 8 10 12 0 0 0.2 0.4 100 2SC3943 IC — VCE 120 VCE=5V TC=100˚C 25˚C 80 –25˚C IC — VBE Collector power dissipation PC (W) 10 Collector current IC (mA) 8 160 6 Collector current IC (mA) 60 4 40 2 20 0.6 0.8 1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10000 10 IC/IB=10 hFE — IC 600 VCE=5V fT — IE VCB=10V f=10MHz TC=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) 100 3000 500 3 1000 300 100 30 10 3 1 0.1 400 1 25˚C TC=100˚C –25˚C 300 0.3 25˚C 0.1 TC=100˚C –25˚C 0.03 200 100 0.01 1 3 10 30 100 300 0.3 1 3 10 30 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 6 Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C 1000 300 ICP Single pulse Ta=25˚C t=10ms 100 IC 100ms 30 10 3 1 0.3 DC Collector output capacitance Cob (pF) 5 4 3 2 1 0 1 3 10 30 100 Collector current IC (A) 0.1 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2