2SC3944A

Power Transistors 2SC3944, 2SC3944A Silicon NPN epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SA1535 and 2SA1535A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q 7.5±0.2 Solder Dip 4.0 14.0±0.5 q q q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SA1535 and 2SA1535A, which is optimum for the driver-stage of a 60 to 100W output amplifier Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 150 180 150 180 5 1.5 1 15 2.0 150 –55 to +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC3944 2SC3944A 2SC3944 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SC3944A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.7±0.3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage 2SC3944 2SC3944A 2SC3944 2SC3944A (TC=25˚C) Symbol ICBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * Conditions VCB = 150V, IE = 0 VCB = 180V, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA VCE = 5V, IC = 500mA IC = 500mA, IB = 50mA IC = 500mA, IB = 50mA VCB = 10V, IE = –50mA, f = 10MHz VCB = 10V, IE = 0, f = 1MHz min typ max 10 10 Unit µA 150 180 5 95 50 160 100 0.5 1 200 30 50 2 2 220 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 V V MHz pF Rank classification Q 95 to 155 R 130 to 220 Rank hFE1 1 Power Transistors PC — Ta Collector to emitter saturation voltage VCE(sat) (V) 25 TC=Ta 10 2SC3944, 2SC3944A VCE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 10 VBE(sat) — IC IC/IB=10 Collector power dissipation PC (W) 20 3 3 TC=–25˚C 100˚C 0.3 25˚C 1 1 15 0.3 TC=100˚C 0.1 25˚C 10 0.1 5 0.03 –25˚C 0.03 0 0 20 40 60 80 100 120 140 160 0.01 0.01 0.03 0.1 0.3 1 0.01 0.01 0.03 0.1 0.3 1 Ambient temperature Ta (˚C) Collector current IC (A) Collector current IC (A) hFE — IC 1000 VCE=10V 400 fT — IE 100 VCB=10V f=10MHz TC=25˚C 300 Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25˚C 80 Forward current transfer ratio hFE 300 25˚C 100 –25˚C Transition frequency fT (MHz) TC=100˚C 60 30 200 40 10 100 20 3 1 0.01 0.03 0.1 0.3 1 0 – 0.01 0 – 0.03 – 0.1 – 0.3 –1 1 3 10 30 100 Collector current IC (A) Emitter current IE (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 10 3 ICP Single pulse TC=25˚C Collector current IC (A) 1 0.3 IC t=