2SC3946

Power Transistors 2SC3946 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 (TC=25˚C) Ratings 350 300 7.5 400 200 15 2.0 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VCER VCEO hFE VCE(sat) fT Cob Conditions VCB = 200V, IE = 0 VEB = 5V, IC = 0 IC = 100µA, IE = 0 IC = 5mA, IB = 0 IC = 100µA, IB = 0, RBE = 1kΩ IE = 100µA, IC = 0 VCB = 10V, IC = 10mA IC = 50mA, IB = 5mA VCE = 30V, IC = 10mA, f = 1MHz VCB = 50V, IE = 0, f = 1MHz 50 5 350 300 350 7.5 40 250 1 V MHz pF min typ max 2 2 Unit µA µA V V V V 1 Power Transistors PC — Ta 20 TC=Ta 200 TC=25˚C TC=75˚C 200 IB=2.0mA 120 2SC3946 IC — VCE 240 25˚C –25˚C VCE=10V IC — VBE Collector power dissipation PC (W) Collector current IC (mA) 12 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA Collector current IC (mA) 16 160 160 120 8 80 80 4 40 0.2mA 40 0 0 40 80 120 160 200 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 1000 hFE — IC 200 VCE=10V fT — IE VCB=30V f=1MHz TC=25˚C 160 Forward current transfer ratio hFE 3 300 25˚C TC=100˚C 1 100 Transition frequency fT (MHz) 300 –25˚C 120 0.3 TC=100˚C –25˚C 30 80 0.1 25˚C 10 40 0.03 3 0.01 1 3 10 30 100 300 1 1 3 10 30 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Collector current IC (A) Emitter current IE (A) Cob — VCB 20 Area of safe operation (ASO) 10 IE=0 f=1MHz TC=25˚C 3 Single pulse TC=25˚C Collector output capacitance Cob (pF) Collector current IC (A) 16 1 ICP 0.3 IC 0.1 1ms 0.03 0.01 0.003 DC t=10ms 12 8 4 0 1 3 10 30 100 0.001 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2