2SC3974

Power Transistors 2SC3974 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm q q q q q 16.2±0.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 800 500 500 15 7 4 80 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 0.7 s Features 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.8A, IB2 = –1.6A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V 1 Power Transistors PC — Ta 120 12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) (1) 60 TC=25˚C 10 2SC3974 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=100˚C 25˚C –25˚C VCE(sat) — IC Collector power dissipation PC (W) 100 Collector current IC (A) 80 8 IB=90mA 50mA 40mA 6 40 4 30mA 20mA 20 (2) (3) 2 10mA 5mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=5 1000 VCE=5V 1000 fT — IC VCE=10V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 3 10 30 100 300 10 100 TC=100˚C 30 25˚C –25˚C 100 3 TC=–25˚C 100˚C 25˚C 0.3 30 1 10 10 3 3 0.1 0.1 0.3 1 3 10 30 100 1 0.1 0.3 1 1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) 3000 Collector current IC (A) 10 3 10 3 IC t=0.5ms 1ms 10ms DC 1000 tstg 1 0.3 0.1 0.03 ton tf 300 1 0.3 0.1 0.03 0.01 100 30 10 1 3 10 30 100 0.01 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 ICP Lcoil=30µH IC/IB=5 (IB1=–IB2) TC≤100˚C 2SC3974 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 –IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3