2SC3976

Power Transistors 2SC3976 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 800 800 500 8 25 12 6 150 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 26.0±0.5 10.0 1.5 2.0 4.0 1.5 20.0±0.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 2.0±0.3 3.0±0.3 1.0±0.2 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 7A IC = 7A, IB = 1.4A IC = 7A, IB = 1.4A VCE = 10V, IC = 1A, f = 1MHz IC = 7A, IB1 = 1.4A, IB2 = –2.8A, VCC = 200V 15 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V 2.0 1.5 3.0 1 Power Transistors PC — Ta 200 24 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) 2SC3976 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 TC=100˚C VCE(sat) — IC Collector power dissipation PC (W) 20 150 Collector current IC (A) (1) 16 IB=700mA 600mA 500mA 400mA 300mA 200mA 100mA 100 12 8 50 4 (2) 0 0 20 40 60 80 100 120 140 160 (3) 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=5 1000 VCE=5V 100 fT — IC VCE=10V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 10 30 100 30 10 100 10 3 30 TC=100˚C –25˚C 3 1 TC=–25˚C 100˚C 25˚C 10 25˚C 1 0.3 3 0.3 0.1 0.1 0.3 1 3 10 30 100 1 0.1 0.3 1 3 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C tstg Area of safe operation (ASO) 100 30 ICP IC 10 10ms 3 1 0.3 0.1 0.03 0.01 DC Non repetitive pulse TC=25˚C t=0.5ms 1ms Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) 3000 10 3 1 1000 300 ton 0.3 tf 0.1 0.03 100 30 10 1 3 10 30 100 0.01 0 5 10 15 20 Collector current IC (A) 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 16 14 Lcoil=30µH IC/IB=5 (IB1=–IB2) TC≤100˚C 2SC3976 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 12 10 8 6 4 2 0 0 ICP –IB2 VCC tW Vclamp 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3