2SC3977A

Power Transistors 2SC3977, 2SC3977A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 1000 900 1000 800 7 2 1 0.3 30 2 150 –55 to +150 Unit V 16.7±0.3 14.0±0.5 Parameter Collector to base voltage Collector to 2SC3977 2SC3977A 2SC3977 Symbol VCBO VCES VCEO VEBO ICP IC IB emitter voltage 2SC3977A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V V A A A W ˚C ˚C Solder Dip s Absolute Maximum Ratings 4.0 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) PC Tj Tstg s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3977 2SC3977A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.2A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A, f = 1MHz IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A, VCC = 250V 15 0.7 2.5 0.3 800 8 3 1.5 1.5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V 1 Power Transistors PC — Ta 40 1.2 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 1.0 IB=400mA 350mA 300mA 250mA 200mA 150mA 100mA 80mA 60mA 40mA 20mA 0.2 2SC3977, 2SC3977A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 –25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C 25˚C VCE(sat) — IC Collector power dissipation PC (W) 30 Collector current IC (A) (1) 0.8 20 0.6 0.4 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=5 1000 VCE=5V 100 fT — IC VCE=10V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 10 30 10 100 10 3 30 3 1 TC=–25˚C 25˚C 100˚C 10 1 0.3 3 TC=–25˚C 25˚C 100˚C 0.1 0.3 1 3 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) 300 10 3 tstg 1 ton 0.3 0.1 0.03 Collector current IC (A) 1 t=10ms 0.3 0.1 0.03 0.01 0.003 0.001 0.3s 100 30 10 tf 3 1 1 3 10 30 100 0.01 0 0.2 0.4 0.6 0.8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 1.6 1.4 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C 2SC3977, 2SC3977A Reverse bias ASO measuring circuit L coil IB1 T.U.T IC Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2SC3977A 2SC3977 IC Vin –IB2 VCC tW Vclamp 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3