Power Transistors
2SC3978, 2SC3978A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
s Features
q q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 900 1000 900 1000 800 7 3 2 0.5 35 2 150 –55 to +150 Unit V
16.7±0.3 14.0±0.5
Parameter Collector to base voltage Collector to 2SC3978 2SC3978A 2SC3978
Symbol VCBO VCES VCEO VEBO ICP IC IB
emitter voltage 2SC3978A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V V A A A W ˚C ˚C
Solder Dip
s Absolute Maximum Ratings
4.0
7.5±0.2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
PC Tj Tstg
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3978 2SC3978A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A IC = 0.5A, IB = 0.1A IC = 0.5A, IB = 0.1A VCE = 10V, IC = 0.1A, f = 1MHz IC = 0.5A, IB1 = 0.1A, IB2 = – 0.2A, VCC = 250V 15 0.7 2.5 0.3 800 8 6 1.5 1.5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V
1
Power Transistors
PC — Ta
60 3.0 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 2.5
2SC3978, 2SC3978A
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 TC=100˚C 25˚C
VCE(sat) — IC
Collector power dissipation PC (W)
50
Collector current IC (A)
IB=500mA 400mA 300mA 200mA
40 (1) 30
2.0
1.5 100mA 1.0
20 (2) (3) 0 0 20 40 60 80 100 120 140 160 (4)
10
0.5
50mA
–25˚C
0 0 2 4 6 8 10 12
0.01 0.01 0.03
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) — IC
100
hFE — IC
IC/IB=5 1000 VCE=5V 100
fT — IC
VCE=10V f=1MHz TC=25˚C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
1 3 10
30
10
100
10
3
30
TC=100˚C
3
1
TC=–25˚C 100˚C
10 25˚C 3 –25˚C
1
0.3
25˚C
0.3
0.1 0.01 0.03
0.1
0.3
1
3
10
1 0.01 0.03
0.1
0.3
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob — VCB
1000 100 IE=0 f=1MHz TC=25˚C 30
ton, tstg, tf — IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C
Area of safe operation (ASO)
10 3 ICP IC Non repetitive pulse TC=25˚C t=1ms 10ms DC 0.3 0.1 0.03 0.01 0.003 0.001
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (µs)
300
10 3 1 0.3 0.1 0.03
Collector current IC (A)
1.6
1
100
30
tstg ton tf
10
3
1 1 3 10 30 100
0.01 0 0.4 0.8 1.2
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
4.0 3.5 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C
2SC3978, 2SC3978A
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
3.0 2.5 2.0 1.5 1.0 0.5 0 0
ICP
IC
–IB2
VCC
200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)
2SC3978A
tW
Vclamp
2SC3978
Rth(t) — t
10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)
1000
100
(1)
10
(2)
1
0.1 10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
很抱歉,暂时无法提供与“2SC3978”相匹配的价格&库存,您可以联系我们找货
免费人工找货